%0 Journal Article %1 journals/tvlsi/YangPSWYJ15 %A Yang, Younghwi %A Park, Juhyun %A Song, Seung Chul %A Wang, Joseph %A Yeap, Geoffrey %A Jung, Seong-Ook %D 2015 %J IEEE Trans. VLSI Syst. %K dblp %N 11 %P 2748-2752 %T Single-Ended 9T SRAM Cell for Near-Threshold Voltage Operation With Enhanced Read Performance in 22-nm FinFET Technology. %U http://dblp.uni-trier.de/db/journals/tvlsi/tvlsi23.html#YangPSWYJ15 %V 23

@article{journals/tvlsi/YangPSWYJ15, added-at = {2015-10-30T00:00:00.000+0100}, author = {Yang, Younghwi and Park, Juhyun and Song, Seung Chul and Wang, Joseph and Yeap, Geoffrey and Jung, Seong-Ook}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/234dab0de4bf46fe60141d45fc3829506/dblp}, ee = {http://dx.doi.org/10.1109/TVLSI.2014.2367234}, interhash = {93773895c25ac7269a3c1c616324e675}, intrahash = {34dab0de4bf46fe60141d45fc3829506}, journal = {IEEE Trans. VLSI Syst.}, keywords = {dblp}, number = 11, pages = {2748-2752}, timestamp = {2016-02-02T02:13:15.000+0100}, title = {Single-Ended 9T SRAM Cell for Near-Threshold Voltage Operation With Enhanced Read Performance in 22-nm FinFET Technology.}, url = {http://dblp.uni-trier.de/db/journals/tvlsi/tvlsi23.html#YangPSWYJ15}, volume = 23, year = 2015 }