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32nm and beyond Multi-VT Ultra-Thin Body and BOX FDSOI: From device to circuit., , , , , , , , , and 4 other author(s). ISCAS, page 1703-1706. IEEE, (2010)Precise EOT regrowth extraction enabling performance analysis of low temperature extension first devices., , , , , , , , , and 5 other author(s). ESSDERC, page 144-147. IEEE, (2017)Intermediate BEOL process influence on power and performance for 3DVLSI., , , , , , , and . 3DIC, page TS1.3.1-TS1.3.5. IEEE, (2015)Role of synaptic variability in spike-based neuromorphic circuits with unsupervised learning., , , , , , and . ISCAS, page 1-5. IEEE, (2018)From 2D to Monolithic 3D: Design Possibilities, Expectations and Challenges., , , , , , , , , and 2 other author(s). ISPD, page 127. ACM, (2015)A comprehensive study of monolithic 3D cell on cell design using commercial 2D tool., , , , , , , , , and 6 other author(s). DATE, page 1192-1196. ACM, (2015)Benefit of Al2O3/HfO2 bilayer for BEOL RRAM integration through 16kb memory cut characterization., , , , , , , , , and 6 other author(s). ESSDERC, page 266-269. IEEE, (2015)Recent advances in 3D VLSI integration., , , , , , , , , and 7 other author(s). ICICDT, page 1-4. IEEE, (2016)FDSOI bottom MOSFETs stability versus top transistor thermal budget featuring 3D monolithic integration., , , , , , , , , and 6 other author(s). ESSDERC, page 110-113. IEEE, (2014)Transistor Temperature Deviation Analysis in Monolithic 3D Standard Cells., , , , , , , , , and 2 other author(s). ISVLSI, page 539-544. IEEE Computer Society, (2017)