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Strain Engineered Electrically Pumped SiGeSn Microring Lasers on Si

B. Marzban, L. Seidel, T. Liu, K. Wu, V. Kiyek, M. Zoellner, Z. Ikonic, J. Schulze, D. Grützmacher, G. Capellini, M. Oehme, J. Witzens, and D. Buca. ACS Photonics, (December 2022)
DOI: 10.1021/acsphotonics.2c01508

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Strain Engineered Electrically Pumped SiGeSn Microring Lasers on SiB. Marzban, L. Seidel, T. Liu, K. Wu, V. Kiyek, M. Zöllner, Z. Ikonic, J. Schulze, D. Grützmacher, G. Capellini and 3 other author(s). ACS Photonics, 10 (1): 217–224 (2023)Electrically pumped GeSn/SiGeSn micro-rings lasers on Si with minimum threshold current of 40 mAT. Liu, L. Seidel, B. Marzban, M. Oehme, J. Witzens, G. Capellini, D. Grützmacher, and D. Buca. 2023 IEEE Silicon Photonics Conference (SiPhotonics), page 1-2. (April 2023)Ultra flexible SiGe/Si/Cr nanosprings.D. Grützmacher, L. Zhang, L. Dong, D. Bell, B. Nelson, A. Prinz, and E. Ruh. Microelectronics Journal, 39 (3-4): 478-481 (2008)Hybrid Nanorobotic Approaches for Fabricating NEMS from 3D Helical Nanostructures.L. Dong, L. Zhang, D. Bell, B. Nelson, and D. Grützmacher. ICRA, page 1396-1401. IEEE, (2006)Strain Engineered Electrically Pumped SiGeSn Microring Lasers on SiB. Marzban, L. Seidel, T. Liu, K. Wu, V. Kiyek, M. Zoellner, Z. Ikonic, J. Schulze, D. Grützmacher, G. Capellini and 3 other author(s). ACS Photonics, (December 2022)APCVD-Grown Self-Aligned SiGe-Base HBTsJ. Burghartz, T. Sedgwick, D. Grutzmacher, D. Nguyen-Ngoc, and K. Jenkins. 1993 Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting, page 55-62. Piscataway, New Jersey, IEEE, (1993)An Ultra-low Thermal-budget SiGe-base Bipolar TechnologyJ. Burghartz, D. Grutzmacher, T. Sedgwick, K. Jenkins, A. Megdanis, J. Cotte, D. Nguyen-Ngoc, and S. Iyer. Digest of technical papers : 1993 Symposium on VLSI Technology : May 17 - 19, 1993, Kyoto, page 59-60. Piscataway, New Jersey, IEEE, (1993)High-performance emitter-up/down SiGe HBT'sJ. Burghartz, K. Jenkins, D. Grutzmacher, T. Sedgwick, and C. Stanis. IEEE Electron Device Letters, 15 (9): 360-362 (September 1994)Low Temperature Atmospheric Pressure Chemical Vapour Desposition for Epitaxial Growth of SiGe Bipolar TransistorsT. Sedgwick, J. Burghartz, and D. Grutzmacher. Semiconductor silicon, 1994 : proceedings of the Seventh International Symposium on Silicon Materials Science and Technology, page 298-310. Pennington, New Jersey, The Electrochemical Society, (1994)

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Strain Engineered Electrically Pumped SiGeSn Microring Lasers on Si

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copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Strain Engineered Electrically Pumped SiGeSn Microring Lasers on Si

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Strain Engineered Electrically Pumped SiGeSn Microring Lasers on Si