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Electrically pumped GeSn/SiGeSn micro-rings lasers on Si with minimum threshold current of 40 mA

, , , , , , , and . 2023 IEEE Silicon Photonics Conference (SiPhotonics), page 1-2. (April 2023)
DOI: 10.1109/SiPhotonics55903.2023.10141949

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Gesn Alloys: From Optical to Electrical Pumped Lasers, , , , , and . ECS Meeting Abstracts, MA2022-02 (32): 1166 (October 2022)Strain Engineered Electrically Pumped SiGeSn Microring Lasers on Si, , , , , , , , , and 3 other author(s). ACS Photonics, 10 (1): 217–224 (2023)Electrically pumped GeSn/SiGeSn micro-rings lasers on Si with minimum threshold current of 40 mA, , , , , , , and . IEEE Silicon Photonics Conference proceedings, Piscataway, NJ, IEEE, (2023)Ab initio calculation of the deformation potential and photoelastic coefficients of silicon with a non-uniform finite-difference solver based on the local density approximation.. Comput. Phys. Commun., 185 (8): 2221-2231 (2014)Electrically pumped GeSn/SiGeSn micro-rings lasers on Si with minimum threshold current of 40 mA, , , , , , , and . 2023 IEEE Silicon Photonics Conference (SiPhotonics), page 1-2. (April 2023)High-Speed Silicon Photonics Modulators.. Proceedings of the IEEE, 106 (12): 2158-2182 (2018)Time resolved electro-optic measurements in strained silicon racetrack resonators., , , , , , , and . ICTON, page 1-4. IEEE, (2016)10Gb/s 15mW optical receiver with integrated Germanium photodetector and hybrid inductor peaking in 0.13µm SOI CMOS technology., , , , , and . ISSCC, page 360-361. IEEE, (2010)Strain Engineered Electrically Pumped SiGeSn Microring Lasers on Si, , , , , , , , , and 3 other author(s). ACS Photonics, (December 2022)