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A Commercial Field-Programmable Dense eFUSE Array Memory with 99.999% Sense Yield for 45nm SOI CMOS.

G. Uhlmann, T. Aipperspach, T. Kirihata, K. Chandrasekharan, Y. Li, C. Paone, B. Reed, N. Robson, J. Safran, D. Schmitt, and S. Iyer. ISSCC, page 406-407. IEEE, (2008)

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PD Dr. Norman Stutzig University of Stuttgart

PD Dr. Norman Domeier University of Stuttgart

Other publications of authors with the same name

Oxygen vacancy traps in Hi-K/Metal gate technologies and their potential for embedded memory applications.C. Kothandaraman, X. Chen, D. Moy, D. Lea, S. Rosenblatt, F. Khan, D. Leu, T. Kirihata, D. Ioannou, G. Rosa and 3 other author(s). IRPS, page 2. IEEE, (2015)Electrically Programmable Fuse (eFUSE): From Memory Redundancy to Autonomic Chips.N. Robson, J. Safran, C. Kothandaraman, A. Cestero, X. Chen, R. Rajeevakumar, A. Leslie, D. Moy, T. Kirihata, and S. Iyer. CICC, page 799-804. IEEE, (2007)Three-Dimensional Dynamic Random Access Memories Using Through-Silicon-Vias.T. Kirihata, J. Golz, M. Wordeman, P. Batra, G. Maier, N. Robson, T. Graves-abe, D. Berger, and S. Iyer. IEEE J. Emerg. Sel. Topics Circuits Syst., 6 (3): 373-384 (2016)Field Tolerant Dynamic Intrinsic Chip ID Using 32 nm High-K/Metal Gate SOI Embedded DRAM.S. Rosenblatt, D. Fainstein, A. Cestero, J. Safran, N. Robson, T. Kirihata, and S. Iyer. J. Solid-State Circuits, 48 (4): 940-947 (2013)A Self-Authenticating Chip Architecture Using an Intrinsic Fingerprint of Embedded DRAM.S. Rosenblatt, S. Chellappa, A. Cestero, N. Robson, T. Kirihata, and S. Iyer. J. Solid-State Circuits, 48 (11): 2934-2943 (2013)A Commercial Field-Programmable Dense eFUSE Array Memory with 99.999% Sense Yield for 45nm SOI CMOS.G. Uhlmann, T. Aipperspach, T. Kirihata, K. Chandrasekharan, Y. Li, C. Paone, B. Reed, N. Robson, J. Safran, D. Schmitt and 1 other author(s). ISSCC, page 406-407. IEEE, (2008)Dynamic intrinsic chip ID using 32nm high-K/metal gate SOI embedded DRAM.D. Fainstein, S. Rosenblatt, A. Cestero, N. Robson, T. Kirihata, and S. Iyer. VLSIC, page 146-147. IEEE, (2012)

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Disambiguation of "Robson, Norman"

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A Commercial Field-Programmable Dense eFUSE Array Memory with 99.999% Sense Yield for 45nm SOI CMOS.

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PD Dr. Norman Stutzig University of Stuttgart

PD Dr. Norman Domeier University of Stuttgart

Other publications of authors with the same name

Disambiguation

PUMA

Disambiguation of "Robson, Norman"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML A Commercial Field-Programmable Dense eFUSE Array Memory with 99.999% Sense Yield for 45nm SOI CMOS.

Please choose a person to relate this publication to

PD Dr. Norman Stutzig University of Stuttgart

PD Dr. Norman Domeier University of Stuttgart

Other publications of authors with the same name

Disambiguation

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URL
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A Commercial Field-Programmable Dense eFUSE Array Memory with 99.999% Sense Yield for 45nm SOI CMOS.