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Low frequency noise as a reliability diagnostic tool in compound semiconductor transistors., , , and . Microelectronics Reliability, 44 (9-11): 1361-1368 (2004)Evolution of LF noise in Power PHEMT's submitted to RF and DC Step Stresses., , , , , , , and . Microelectronics Reliability, 41 (9-10): 1573-1578 (2001)Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si substrate by on-state step stress., , , , , , and . Microelectronics Reliability, (2016)AlGaN/GaN HEMT Reliability Assessment by means of Low Frequency Noise Measurements., , , , , and . Microelectronics Reliability, 46 (9-11): 1725-1730 (2006)Analysis of Schottky gate degradation evolution in AlGaN/GaN HEMTs during HTRB stress., , , , , , , , , and 2 other author(s). Microelectronics Reliability, 53 (9-11): 1450-1455 (2013)Safe operating area of GaAs MESFET and PHEMT for amplification in overdrive operating conditions., , , , , , and . Microelectronics Reliability, 45 (9-11): 1611-1616 (2005)Analysis of current collapse effect in AlGaN/GaN HEMT: Experiments and numerical simulations., , , , , , , and . Microelectronics Reliability, 50 (9-11): 1520-1522 (2010)Analysis of traps effect on AlGaN/GaN HEMT by luminescence techniques., , , , , , , and . Microelectronics Reliability, 48 (8-9): 1366-1369 (2008)Study of passivation defects by electroluminescence in AlGaN/GaN HEMTS on SiC., , , , , , , and . Microelectronics Reliability, 47 (9-11): 1630-1633 (2007)Characterisation and modelling of parasitic effects and failure mechanisms in AlGaN/GaN HEMTs., , , , , , , , , and 3 other author(s). Microelectronics Reliability, 49 (9-11): 1216-1221 (2009)