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Evolution of LF noise in Power PHEMT's submitted to RF and DC Step Stresses.

, , , , , , , and . Microelectronics Reliability, 41 (9-10): 1573-1578 (2001)

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Front Side and Backside OBIT Mappings applied to Single Event Transient Testing., , , , , , , and . Microelectronics Reliability, 41 (9-10): 1471-1476 (2001)Evolution of LF noise in Power PHEMT's submitted to RF and DC Step Stresses., , , , , , , and . Microelectronics Reliability, 41 (9-10): 1573-1578 (2001)Low frequency noise as a reliability diagnostic tool in compound semiconductor transistors., , , and . Microelectronics Reliability, 44 (9-11): 1361-1368 (2004)Different Failure signatures of multiple TLP and HBM Stresses in an ESD robust protection structure., , , , , , , , and . Microelectronics Reliability, 45 (9-11): 1415-1420 (2005)Editorial., and . Microelectronics Reliability, 47 (9-11): 1311-1312 (2007)Degradation mechanisms induced by thermal and bias stresses in InP HEMTs., , , , , and . Microelectronics Reliability, 42 (9-11): 1575-1580 (2002)Reliability investigations of 850 nm silicon photodiodes under proton irradiation for space applications., , , , , , , , and . Microelectronics Reliability, 48 (8-9): 1202-1207 (2008)Application of various optical techniques for ESD defect localization., , , , , , , , , and . Microelectronics Reliability, 46 (9-11): 1563-1568 (2006)High current effects in InP/GaAsSb/InP DHBT: Physical mechanisms and parasitic effects., , , , and . Microelectronics Reliability, 43 (9-11): 1731-1736 (2003)Characterization and analysis of trap-related effects in AlGaN-GaN HEMTs., , , , , , , , , and 2 other author(s). Microelectronics Reliability, 47 (9-11): 1639-1642 (2007)