PUMA

academical publication management
collect, organize, and share publications

( en | de )

 

Disambiguation of "Lambert, Benoit"

Author of the publication

copydeleteadd this publication to your clipboard
Analysis of Schottky gate degradation evolution in AlGaN/GaN HEMTs during HTRB stress.

, , , , , , , , , , , and . Microelectronics Reliability, 53 (9-11): 1450-1455 (2013)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

Benoît Paul Dumas University of Stuttgart

Lambert Theisen University of Stuttgart

 

Other publications of authors with the same name

Investigation of the dynamic on-state resistance of AlGaN/GaN HEMTs., , , , , and . Microelectronics Reliability, 55 (9-10): 1672-1676 (2015)Kink effect characterization in AlGaN/GaN HEMTs by DC and drain current transient measurements., , , , and . ESSDERC, page 270-273. IEEE, (2012)Qualification of 50 V GaN on SiC technology for RF power amplifiers., , , , and . Microelectronics Reliability, 53 (9-11): 1439-1443 (2013)Reliability data's of 0.5 μm AlGaN/GaN on SiC technology qualification., , , , , , , , , and 2 other author(s). Microelectron. Reliab., 52 (9-10): 2200-2204 (2012)Evolution of LF noise in Power PHEMT's submitted to RF and DC Step Stresses., , , , , , , and . Microelectronics Reliability, 41 (9-10): 1573-1578 (2001)Proton induced trapping effect on space compatible GaN HEMTs., , , , , , , , , and 1 other author(s). Microelectronics Reliability, 54 (9-10): 2213-2216 (2014)Analysis of traps effect on AlGaN/GaN HEMT by luminescence techniques., , , , , , , and . Microelectronics Reliability, 48 (8-9): 1366-1369 (2008)Evidence of relationship between mechanical stress and leakage current in AlGaN/GaN transistor after storage test., , , , , , , , , and 1 other author(s). Microelectron. Reliab., 52 (9-10): 2184-2187 (2012)Failure signatures on 0.25 μm GaN HEMTs for high-power RF applications., , , , , , , , and . Microelectronics Reliability, 54 (9-10): 2237-2241 (2014)Reliability of high voltage/high power L/S-band Hbt technology., , , , , , , , , and . Microelectronics Reliability, 50 (9-11): 1543-1547 (2010)