PUMA

academical publication management
collect, organize, and share publications

( en | de )

 

Disambiguation of "Park, Jong Mun"

Author of the publication

copydeleteadd this publication to your clipboard
A method for generating structurally aligned grids for semiconductor device simulation.

, , , and . IEEE Trans. on CAD of Integrated Circuits and Systems, 24 (10): 1485-1491 (2005)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

Sumee Park

Lukas Münch University of Stuttgart

Soo Yong Park University of Stuttgart

Tanja Munz-Körner University of Stuttgart

Dr. -Ing. Ralf Münzenmayer University of Stuttgart

 

Other publications of authors with the same name

Evolution of a CMOS Based Lateral High Voltage Technology Concept., , and . Microelectronics Journal, 37 (3): 243-248 (2006)Hot-carrier reliability in high-voltage lateral double-diffused MOS transistors., , , , , , and . IET Circuits, Devices & Systems, 2 (3): 347-353 (2008)A method for generating structurally aligned grids for semiconductor device simulation., , , and . IEEE Trans. on CAD of Integrated Circuits and Systems, 24 (10): 1485-1491 (2005)High-voltage lateral trench gate SOI-LDMOSFETs., , and . Microelectronics Journal, 35 (3): 299-304 (2004)Improving SiC lateral DMOSFET reliability under high field stress., , , , and . Microelectronics Reliability, 43 (9-11): 1889-1894 (2003)Analysis of hot carrier effects in a 0.35 µm high voltage n-channel LDMOS transistor., , , and . Microelectronics Reliability, 47 (9-11): 1439-1443 (2007)An analytical approach for physical modeling of hot-carrier induced degradation., , , , , , , , and . Microelectronics Reliability, 51 (9-11): 1525-1529 (2011)Interface traps density-of-states as a vital component for hot-carrier degradation modeling., , , , , , , , , and 4 other author(s). Microelectronics Reliability, 50 (9-11): 1267-1272 (2010)