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Weitere Publikationen von Autoren mit dem selben Namen

Reliability-Driven Voltage Optimization for NCFET-based SRAM Memory Banks, , , , und . 2021 IEEE 39th VLSI Test Symposium (VTS), Piscataway, IEEE, (2021)Cross-Layer Reliability Modeling of Dual-Port FeFET : Device-Algorithm Interaction, , , , und . IEEE transactions on circuits and systems. 1, Fundamental theory and applications, 70 (7): 2891-2903 (2023)Cross-layer Design for Computing-in-Memory : From Devices, Circuits, to Architectures and Applications, , , , , , , und . ASPDAC '21 : Proceedings of the 26th Asia and South Pacific Design Automation Conference, Seite 132-139. New York, Association for Computing Machinery, (2021)Reliable Brain-inspired AI Accelerators using Classical and Emerging Memories, , , , , , , , und . 2023 IEEE 41st VLSI Test Symposium (VTS), Piscataway, NJ, IEEE, (2023)Compact and High-Performance TCAM Based on Scaled Double-Gate FeFETs, , , , und . 2023 60th ACM/IEEE Design Automation Conference (DAC), Seite 1-6. Piscataway, NJ, IEEE, (2023)Joint Modeling of Multi-Domain Ferroelectric and Distributed Channel towards Unveiling the Asymmetric Abrupt DC Current Jump in Ferroelectric FET, , und . ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC), Seite 336-339. Piscataway, NJ, IEEE, (2022)On the Reliability of In-Memory Computing : Impact of Temperature on Ferroelectric TCAM, , , , , , und . Proceedings 2021 IEEE 39th VLSI Test Symposium (VTS), Piscataway, IEEE, (2021)Comprehensive Variability Analysis in Dual-Port FeFET for Reliable Multi-Level-Cell Storage, , , , und . IEEE transactions on electron devices, 69 (9): 5316-5323 (2022)HW/SW Codesign for Approximate In-Memory Computing, , und . 2022 23rd International Symposium on Quality Electronic Design (ISQED), Piscataway, IEEE, (2022)On the Channel Percolation in Ferroelectric FET Towards Proper Analog States Engineering, , , , , und . 2021 IEEE International Electron Devices Meeting (IEDM), Seite 15.3.1-15.3.4. Piscataway, IEEE, (2021)