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Flash correct-and-refresh: Retention-aware error management for increased flash memory lifetime.

, , , , , , and . ICCD, page 94-101. IEEE Computer Society, (2012)

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Threshold voltage distribution in MLC NAND flash memory: characterization, analysis, and modeling., , , and . DATE, page 1285-1290. EDA Consortium San Jose, CA, USA / ACM DL, (2013)Characterizing, Exploiting, and Mitigating Vulnerabilities in MLC NAND Flash Memory Programming., , , , , and . CoRR, (2018)Neighbor-cell assisted error correction for MLC NAND flash memories., , , , , , and . SIGMETRICS, page 491-504. ACM, (2014)Noise modeling and capacity analysis for NAND flash memories., , and . ISIT, page 2262-2266. IEEE, (2014)Write process modeling in MLC flash memories using renewal theory., , , and . ISIT, page 651-655. IEEE, (2015)A study of polar codes for MLC NAND flash memories., , , and . ICNC, page 608-612. IEEE Computer Society, (2015)A Bit-Node Centric Architecture for Low-Density Parity-Check Decoders., , and . GLOBECOM, page 265-270. IEEE, (2007)VLSI Design of High-Rate Quasi-Cyclic LDPC Codes for Magnetic Recording Channel., , and . CICC, page 325-328. IEEE, (2006)Errors in Flash-Memory-Based Solid-State Drives: Analysis, Mitigation, and Recovery., , , , and . CoRR, (2017)Read Disturb Errors in MLC NAND Flash Memory., , , , , and . CoRR, (2018)