Author of the publication

Strained Ge Channels with High Hole Mobility Grown on Si Substrates by Molecular Beam Epitaxy

, , , , , , and . 2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO), page 40-44. (September 2021)
DOI: 10.23919/MIPRO52101.2021.9597145

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

 

Other publications of authors with the same name

Carrier mobilities in heavily doped pseudomorphic Ge1-x Snx-epilayers, , , , , , , , , and . 2020 43rd International Convention on Information, Communication and Electronic Technology (MIPRO), page 17-21. (September 2020)Titanium and Nickel as alternative materials for mid Infrared Plasmonic, , , , and . 2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO), page 36-39. (September 2021)Sharp MIR plasmonic modes in gratings made of heavily doped pulsed laser-melted Ge1-xSnx, , , , , , and . Opt. Mater. Express, 13 (3): 752--763 (2023)Strained Ge Channels with High Hole Mobility Grown on Si Substrates by Molecular Beam Epitaxy, , , , , , and . 2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO), page 40-44. (September 2021)