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Strained Ge Channels with High Hole Mobility Grown on Si Substrates by Molecular Beam Epitaxy

, , , , , , and . 2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO), page 40-44. (September 2021)
DOI: 10.23919/MIPRO52101.2021.9597145

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Strained Ge Channels with High Hole Mobility Grown on Si Substrates by Molecular Beam Epitaxy, , , , , , and . 2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO), page 40-44. (September 2021)