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MBE-Grown Ge0.92Sn0.08 Diode on RPCVD-Grown Partially Relaxed Virtual Ge0.92Sn0.08 Substrate

, , , , , , , , , and . 2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO), page 50-54. (September 2021)
DOI: 10.23919/MIPRO52101.2021.9596634

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