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Aging-aware voltage scaling., , , , and . DATE, page 576-581. IEEE, (2016)TCAD modeling for reliability., , , , , , , , , and 1 other author(s). Microelectron. Reliab., (2018)CARAT : A reliability analysis framework for BTI-HCD aging in circuits, , , , , , , , and . Solid state electronics, 201 (March): 108586 (2023)A comprehensive modeling framework for gate stack process dependence of DC and AC NBTI in SiON and HKMG p-MOSFETs., , , , and . Microelectronics Reliability, 54 (3): 491-519 (2014)Prediction of NBTI stress and recovery time kinetics in Si capped SiGe p-MOSFETs., and . IRPS, page 5-1. IEEE, (2018)Combined trap generation and transient trap occupancy model for time evolution of NBTI during DC multi-cycle and AC stress., , and . IRPS, page 4. IEEE, (2015)Modeling the Interdependences Between Voltage Fluctuation and BTI Aging., , , , , and . IEEE Trans. VLSI Syst., 27 (7): 1652-1665 (2019)Time dependent variability in RMG-HKMG FinFETs: Impact of extraction scheme on stochastic NBTI., , , , , and . IRPS, page 3. IEEE, (2015)On the Frequency Dependence of Bulk Trap Generation During AC Stress in Si and SiGe RMG P-FinFETs., , , , , and . IRPS, page 1-8. IEEE, (2019)