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Worst-case analysis to obtain stable read/write DC margin of high density 6T-SRAM-array with local Vth variability., , , , , , , , and . ICCAD, page 398-405. IEEE Computer Society, (2005)A 65-nm SoC Embedded 6T-SRAM Designed for Manufacturability With Read and Write Operation Stabilizing Circuits., , , , , , , , , and 6 other author(s). J. Solid-State Circuits, 42 (4): 820-829 (2007)A 45nm Low-Standby-Power Embedded SRAM with Improved Immunity Against Process and Temperature Variations., , , , , , , , , and 6 other author(s). ISSCC, page 326-606. IEEE, (2007)A 65nm Embedded SRAM with Wafer-Level Burn-In Mode, Leak-Bit Redundancy and E-Trim Fuse for Known Good Die., , , , , , , , , and 7 other author(s). ISSCC, page 488-617. IEEE, (2007)Synchronous Ultra-High-Density 2RW Dual-Port 8T-SRAM With Circumvention of Simultaneous Common-Row-Access., , , , , , , , and . J. Solid-State Circuits, 44 (3): 977-986 (2009)A 45-nm Bulk CMOS Embedded SRAM With Improved Immunity Against Process and Temperature Variations., , , , , , , , , and 6 other author(s). J. Solid-State Circuits, 43 (1): 180-191 (2008)A 65 nm Embedded SRAM With Wafer Level Burn-In Mode, Leak-Bit Redundancy and Cu E-Trim Fuse for Known Good Die., , , , , , , , , and 8 other author(s). J. Solid-State Circuits, 43 (1): 96-108 (2008)