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A new extraction technique for the series resistances of semiconductor devices based on the intrinsic properties of bias-dependent y-parameters

V. Cuoco, W. Neo, L. de Vreede, H. de Graaff, L. Nanver, H. Wu, J. H. F. F., and B. Joachim N.. Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting, page 148-151. Piscataway, New Jersey, IEEE, (2004)
DOI: 10.1109/BIPOL.2004.1365766

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Univ. -Prof. Dr. -Ing. Joachim Burghartz University of Stuttgart

PD Dr. phil. Joachim Wündisch University of Stuttgart

Dr. Joachim Pfeiffer University of Stuttgart

Hon. -Prof. Dr. -Ing. Joachim Birk University of Stuttgart

Prof. Dr. -Ing. Joachim Speidel University of Stuttgart

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Ultra-Thin Sensor Systems Integrating Silicon Chips With On-Foil Passive And Active ComponentsE. Mourad, A. Golzar, A. Bjorn, D. Thomas, H. Christine, R. Harald, Y. Zili, and J. Burghartz. EUROSENSORS 2018 Graz, Austria : 9–12 September 2018, volume 2 of Proceedings, Basel, MDPI AG, (2018)Spiral Inductors On Silicon : Status And TrendsJ. Burghartz. International Journal of RF and Microwave computer-aided engineering, 8 (6): 422-432 (November 1998)RF Passives on Silicon : The Intended and the UnintendedJ. Burghartz. Lehrgang, (October 2006)Permeability and Resonance Frequency of Patterned Magnetic Thin FilmsM. Vroubel, B. Rejaei, Y. Zhuang, and J. Burghartz. (2001)Wafer-Level Chip-Scale Packaging for RF ApplicationsA. Polyakov, M. Bartek, J. Burghartz, P. Mendes, and H. Zurlo. (2003)Power Amplifier Optimization for Mobile Application by Second Harmonic ControlM. Spirito, L. de Vreede, L. Nanver, S. Weber, and J. Burghartz. page 471-475. (2002)Status and Trends of Silicon RF TechnologyJ. Burghartz. ESSDERC '99 : proceedings of the 29th European Solid-State Device Research Conference : Leuven, Belgium, 13-15 September, 1999, page 56-63. Paris, Editions Frontières, (1999)Opportunities for Standard Silicon Technology in RF&Microwave ApplicationsJ. Burghartz, M. Soyuer, K. Jenkins, Y. Kwark, S. Ponnapalli, J. Ewen, and W. Pence. ESSDERC '95 : proceedings of the 25th European Solid State Device Research Conference, The Netherlands Congress Centre, The Hague, The Netherlands, 25th - 27th September 1995, page 363-367. Gif-sur-Yvette, Éditions Frontières, (1995)Multilevel Monolithic Inductors in Silicon TechnologyM. Soyuer, J. Burghartz, K. Jenkins, S. Ponnapalli, J. Ewen, and W. Pence. Electronics Letters, 31 (5): 359-360 (March 1995)RF components implemented in an analog SiGe bipolar technologyJ. Burghartz, M. Soyuer, K. Jenkins, M. Kies, P. Dolan, K. Stein, J. Malinowski, and D. Harame. Proceedings of the 1996 BIPOLAR/BiCMOS Circuits and Technology Meeting, page 138-141. Piscataway, New Jersey, IEEE, (1996)