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Substrate Integrated Temperature Sensing for Bondless Power Modules

M. Riefer, J. Winkler, S. Strache, and I. Kallfass. in Proc. International Conference on Integrated Power Electronics Systems (CIPS), Berlin, (March 2022)

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Matthias Winkler University of Stuttgart

Melanie Winkler University of Stuttgart

Marcel Winkler University of Stuttgart

Thorsten Winkler University of Stuttgart

Hon. -Prof. Dr. -Ing. Stefan Winkler University of Stuttgart

Other publications of authors with the same name

Electroluminescence-based Junction Temperature Measurement Approach for SiC Power MOSFETsJ. Winkler, J. Homoth, and I. Kallfass. IEEE Transactions on Power Electronics, 35 (3): 2990 - 2998 (July 2019)Carp preproinsulin cDNA sequence and evolution of insulin genes.V. Hahn, J. Winkler, T. Rapoport, D. Liebscher, C. Coutelle, and S. Rosenthal. Nucleic Acids Research, 11 (13): 4541-4552 (1983)Graphics standards in the GDR.A. Kotzauer, B. Urban, M. Mikut, and J. Winkler. Computers & Graphics, 14 (3-4): 367-371 (1990)Implementation of current-source Gate Driver with open-loop slope shaping for SiC-MOSFETsM. Riefer, J. Winkler, S. Strache, and I. Kallfass. in Proc. PCIM Europe Conference, (2021)Novel Approach for Temperature and Current Sensing for Wide Bandgap MaterialsJ. Winkler, J. Homoth, and I. Kallfass. in Proc. Strategic Materials Conference (SMC), Munich, (2019)Study on transient Light Emission of SiC Power MOSFETs regarding the Sensing of Source-Drain Currents in hard switched Power Electronic ApplicationsJ. Winkler, J. Homoth, H. Bartolf, and I. Kallfass. in. Proc. PCIM Europe, Nuremberg, Germany, (2019)Substrate Integrated Temperature Sensing for Bondless Power ModulesM. Riefer, J. Winkler, S. Strache, and I. Kallfass. in Proc. International Conference on Integrated Power Electronics Systems (CIPS), Berlin, (March 2022)Utilization of Parasitic Luminescence from Power Semiconductor Devices for Current SensingJ. Winkler, J. Juergen, S. Schoser, J. Homoth, and I. Kallfass. in. Proc. PCIM Europe, Nuremberg, Germany, (2018)Single Chip Junction Temperature Measurement for Paralleled SiC MOSFETsM. Riefer, J. Winkler, S. Strache, and I. Kallfass. in Proc. ECCE Conference, (2022)Exploiting Photoluminescence for New Implementations of SiC Power Semiconductor DevicesJ. Winkler, J. Homoth, and I. Kallfass. in. Proc. 31st International Electric Vehicles Symposium and Exhibition, EVS 31, and International Electric Vehicle Technology Conference 2018, EVTeC, Kobe, (2018)