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Novel Approach for Temperature and Current Sensing for Wide Bandgap Materials

, , and . in Proc. Strategic Materials Conference (SMC), Munich, (2019)

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Exploiting Photoluminescence for New Implementations of SiC Power Semiconductor Devices, , and . in. Proc. 31st International Electric Vehicles Symposium and Exhibition, EVS 31, and International Electric Vehicle Technology Conference 2018, EVTeC, Kobe, (2018)Electroluminescence-based Junction Temperature Measurement Approach for SiC Power MOSFETs, , and . IEEE Transactions on Power Electronics, 35 (3): 2990 - 2998 (July 2019)Study on transient Light Emission of SiC Power MOSFETs regarding the Sensing of Source-Drain Currents in hard switched Power Electronic Applications, , , and . in. Proc. PCIM Europe, Nuremberg, Germany, (2019)Utilization of Parasitic Luminescence from Power Semiconductor Devices for Current Sensing, , , , and . in. Proc. PCIM Europe, Nuremberg, Germany, (2018)Novel Approach for Temperature and Current Sensing for Wide Bandgap Materials, , and . in Proc. Strategic Materials Conference (SMC), Munich, (2019)