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Disambiguation of "Chiarella, Thomas"

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Impact of fin shape variability on device performance towards 10nm node.

, , , , , , , , , , , , and . ICICDT, page 1-4. IEEE, (2015)

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To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

Dipl.-Ing. Thomas Kuestner

Scan time reduction in DWI of the pancreas using simultaneous multislice technique with different acceleration factors: how fast can we go?, , , , , , , and . Proceedings of the International Society for Magnetic Resonance in Medicine (ISMRM), Honolulu, Hawaii, USA, (April 2017)

Univ. -Prof. Dr. Thomas Graf University of Stuttgart

Bending of Lloyd’s mirror to eliminate the period chirp in the fabrication of diffraction gratings, , , and . Optics Express, 32 (10): 18430 (May 2024)

Univ. -Prof. Dr. Thomas Schleid University of Stuttgart

PD Dr. -Ing. Günter Thomas University of Stuttgart

Thomas Maier

 

Other publications of authors with the same name

Methodology for extracting the characteristic capacitances of a power MOSFET transistor, using conventional on-wafer testing techniques., , , and . ESSDERC, page 221-225. IEEE, (2012)Time dependent variability in RMG-HKMG FinFETs: Impact of extraction scheme on stochastic NBTI., , , , , and . IRPS, page 3. IEEE, (2015)CDM-Time Domain Turn-on Transient of ESD Diodes in Bulk FinFET and GAA NW Technologies., , , , , , , , , and . IRPS, page 1-7. IEEE, (2019)Impact of fin shape variability on device performance towards 10nm node., , , , , , , , , and 3 other author(s). ICICDT, page 1-4. IEEE, (2015)Towards high performance sub-10nm finW bulk FinFET technology., , , , , , , , , and 10 other author(s). ESSDERC, page 131-134. IEEE, (2016)STI and eSiGe source/drain epitaxy induced stress modeling in 28 nm technology with replacement gate (RMG) process., , , , , , , , and . ESSDERC, page 159-162. IEEE, (2013)Origins and implications of increased channel hot carrier variability in nFinFETs., , , , , , , , , and 11 other author(s). IRPS, page 3. IEEE, (2015)