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Device Simulation and Backside Laser Interferometry--Powerful Tools for ESD Protection Development., , , , , , , , and . Microelectronics Reliability, 42 (9-11): 1267-1274 (2002)Do ESD fails in systems correlate with IC ESD robustness?, , , and . Microelectronics Reliability, 49 (9-11): 1079-1085 (2009)Transient latch-up: experimental analysis and device simulation., , , , , , , and . Microelectronics Reliability, 45 (2): 297-304 (2005)Capacitively coupled transmission line pulsing cc-TLP--a traceable and reproducible stress method in the CDM-domain., , , and . Microelectronics Reliability, 45 (2): 279-285 (2005)Guest editorial.. Microelectronics Reliability, 47 (7): 999 (2007)Backside interferometric methods for localization of ESD-induced leakage current and metal shorts., , , , , and . Microelectronics Reliability, 47 (9-11): 1539-1544 (2007)Editorial ESD reliability special section., and . Microelectronics Reliability, 49 (12): 1405-1406 (2009)Guest editorial.. Microelectronics Reliability, 45 (2): 199-200 (2005)Harnessing the base-pushout effect for ESD protection in bipolar and BiCMOS technologies., , , , , , and . Microelectronics Reliability, 43 (7): 1001-1010 (2003)Physical fundamentals of external transient latch-up and corrective actions., , , , and . Microelectronics Reliability, 46 (5-6): 689-701 (2006)