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Analysis of electromigration-induced backflow stresses in Cu(Mn) interconnects using high statistical sampling.

, , , , , , and . IRPS, page 4. IEEE, (2018)

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Impact of stress-induced backflow on full-chip electromigration risk assessment., , , , , and . IEEE Trans. on CAD of Integrated Circuits and Systems, 25 (6): 1038-1046 (2006)Prediction of SRAM Reliability Under Mechanical Stress Induced by Harsh En§ironments., , , , , , , , , and 2 other author(s). ESSDERC, page 178-181. IEEE, (2018)Advanced methods for mechanical and structural characterization of nanoscale materials for 3D IC integration., , , , , , and . Microelectronics Reliability, 54 (9-10): 1959-1962 (2014)A Methodology for Chip-Level Electromigration Risk Assessment and Product Qualification., , , , , , and . ISQED, page 232-237. IEEE Computer Society, (2004)Analysis of electromigration-induced backflow stresses in Cu(Mn) interconnects using high statistical sampling., , , , , , and . IRPS, page 4. IEEE, (2018)Empirical BEOL-TDDB evaluation based on I(t)-trace analysis., , , and . Microelectronics Reliability, 54 (9-10): 1671-1674 (2014)Analysis of 28 nm SRAM cell stability under mechanical load applied by nanoindentation., , , , , , , , , and 3 other author(s). IRPS, page 5. IEEE, (2018)