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Experimental Demonstration of Post-Fabrication Self-Improvement of SRAM Cell Stability by High-Voltage Stress.

, , , and . IEICE Transactions, 96-C (6): 759-765 (2013)

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Statistical advantages of intrinsic channel fully depleted SOI MOSFETs over bulk MOSFETs., , , , and . CICC, page 1-4. IEEE, (2011)Three-dimensional integrated circuits and stacked CMOS image sensors using direct bonding of SOI layers., , , , , , , , and . 3DIC, page TS9.2.1-TS9.2.4. IEEE, (2015)Verification of the Injection Enhancement Effect in IGBTs by Measuring the Electron and Hole Currents Separately., , , , , , , , , and 8 other author(s). ESSDERC, page 26-29. IEEE, (2018)Quarter Video Graphics Array Full-Digital Image Sensing with Wide Dynamic Range and Linear Output Using Pixel-Wise 3D Integration., , , , , , , , , and 1 other author(s). ISCAS, page 1-4. IEEE, (2018)Experimental Demonstration of Post-Fabrication Self-Improvement of SRAM Cell Stability by High-Voltage Stress., , , and . IEICE Transactions, 96-C (6): 759-765 (2013)New Methodology for Evaluating Minority Carrier Lifetime for Process Assessment., , , , , , , , , and 10 other author(s). VLSI Circuits, page 105-106. IEEE, (2018)NBTI Reliability of PFETs under Post-Fabrication Self-Improvement Scheme for SRAM., , , , and . IEICE Transactions, 96-C (5): 620-623 (2013)