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Improved gain chip holder design for high efficient, high power AlGaInP-VECSEL, , , , , , , and . page 100870R. SPIE, (2017)Transverse-Mode Analysis of Red-Emitting Highly Polarized Vertical-Cavity Surface-Emitting Lasers, , , , , , and . (2011)Red single-photon emission from an InP/GaInP quantum dot embedded in a planar monolithic microcavity, , , , and . (2008)Epitaxially Grown Indium Phosphide Quantum Dots on a Virtual Ge Substrate Realized on Si(001), , , , , , , , and . (2012)Visible-to-Telecom Quantum Frequency Conversion of Light from a Single Quantum Emitter, , , , , , , , , and 1 other author(s). (2012)Optical investigations on single vertically coupled InP/GaInP quantum dot pairs, , , , , , and . (2012)Beam profile characteristics of red VCSEL with oxide-confined aperture, , , , , , and . (2009)Low threshold and room-temperature lasing of electrically pumped red-emitting InP/(Al<sub>0.20 </sub>Ga<sub>0.80</sub> )<sub>0.51</sub> In<sub>0.49</sub> P quantum dots, , , , , , and . (2010)Poster:InP quantum dots for solid state quantum gates and lasers, , , , , , , and . (2010)Poster:Mode characteristics of red VCSEL with oxide-confined aperture, , , , , and . (2009)