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Transverse-Mode Analysis of Red-Emitting Highly Polarized Vertical-Cavity Surface-Emitting Lasers, , , , , , and . (2011)Optical investigations on single vertically coupled InP/GaInP quantum dot pairs, , , , , , and . (2012)Red single-photon emission from an InP/GaInP quantum dot embedded in a planar monolithic microcavity, , , , and . (2008)Beam profile characteristics of red VCSEL with oxide-confined aperture, , , , , , and . (2009)Low threshold and room-temperature lasing of electrically pumped red-emitting InP/(Al<sub>0.20 </sub>Ga<sub>0.80</sub> )<sub>0.51</sub> In<sub>0.49</sub> P quantum dots, , , , , , and . (2010)Poster:Mode characteristics of red VCSEL with oxide-confined aperture, , , , , and . (2009)Poster:InP quantum dots for solid state quantum gates and lasers, , , , , , , and . (2010)Talk:Wavelength tunable red AlGaInP-VECSEL emitting at around 660 nm, , , , , , and . (2011)Talk:Technologietransfer bei InPQuantenpunkten, and . (2004)Low-density InP quantum dots embedded in Ga0.51In0.49 P with high optical quality realized by a strain inducing layer, , , , , , and . (2010)