%0 Conference Paper %1 oehme2016light %A Oehme, Michael %A Gollhofer, Martin %A Kostecki, Konrad %A Koerner, Roman %A Bechler, Stefan %A Widmann, Daniel %A Arguirov, Tzanimir %A Kittler, Martin %A Schulze, Jörg %B Gettering and Defect Engineering in Semiconductor Technology XVI %D 2016 %I Trans Tech Publications %K %P 353-360 %R 10.4028/www.scientific.net/SSP.242.353 %T Ge and GeSn Light Emitters on Si %V 242 %X The heteroepitaxial growth of GeSn and Ge crystals on Si substrates are investigated for Si-based photonic applications. Light Emitting Diodes with emission wavelengths from 2,100 to 1,550 nm could be demonstrated with active intrinsic GeSn light emitting layers between Ge barriers. A clear shift of the direct band gap toward the infrared beyond 2 $\mu$m is measured. Emission intensity is increased compared to Ge Light Emitting Diodes. Room temperature lasing from electrically pumped n-type doped Ge edge emitting devices are demonstrated. The edge emitter is formed by cleaving Si-Ge waveguide heterodiodes, providing optical feedback through a Fabry-Pérot resonator. The electroluminescence spectra of the devices showed optical bleaching and intensity gain for wavelengths between 1,660 nm and 1,700 nm. %@ 978-3-03835-608-0 and 978-3-03859-398-0 and 978-3-0357-0083-1

@inproceedings{oehme2016light, abstract = {The heteroepitaxial growth of GeSn and Ge crystals on Si substrates are investigated for Si-based photonic applications. Light Emitting Diodes with emission wavelengths from 2,100 to 1,550 nm could be demonstrated with active intrinsic GeSn light emitting layers between Ge barriers. A clear shift of the direct band gap toward the infrared beyond 2 $\mu$m is measured. Emission intensity is increased compared to Ge Light Emitting Diodes. Room temperature lasing from electrically pumped n-type doped Ge edge emitting devices are demonstrated. The edge emitter is formed by cleaving Si-Ge waveguide heterodiodes, providing optical feedback through a Fabry-Pérot resonator. The electroluminescence spectra of the devices showed optical bleaching and intensity gain for wavelengths between 1,660 nm and 1,700 nm.}, added-at = {2023-08-31T16:22:48.000+0200}, author = {Oehme, Michael and Gollhofer, Martin and Kostecki, Konrad and Koerner, Roman and Bechler, Stefan and Widmann, Daniel and Arguirov, Tzanimir and Kittler, Martin and Schulze, Jörg}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/24050adb1d72cbf5d56f28c703cd0fab6/puma-wartung}, booktitle = {Gettering and Defect Engineering in Semiconductor Technology XVI}, doi = {10.4028/www.scientific.net/SSP.242.353}, eventdate = {2015-09-20/2015-09-25}, eventtitle = {Gettering and Defect Engineering in Semiconductor Technology XVI (GADEST 2015)}, interhash = {a6553d4f7d029b390e9171b77be1971e}, intrahash = {4050adb1d72cbf5d56f28c703cd0fab6}, isbn = {{978-3-03835-608-0} and {978-3-03859-398-0} and {978-3-0357-0083-1}}, keywords = {}, language = {eng}, pages = {353-360}, publisher = {Trans Tech Publications}, series = {Solid State Phenomena}, timestamp = {2023-08-31T14:22:48.000+0200}, title = {Ge and GeSn Light Emitters on Si}, venue = {Bad Staffelstein, Germany}, volume = 242, year = 2016 }