%0 Thesis %1 alshahed2019gallium %A Alshahed, Muhammad %B Berichte aus der Halbleitertechnik %C Düren %D 2019 %I Shaker Verlag %K %T Gallium nitride high electron mobility transistors on native substrates for power switching applications : fabrication, characterization and modelling %@ 978-3-8440-6885-6

@phdthesis{alshahed2019gallium, added-at = {2023-08-31T16:23:10.000+0200}, address = {Düren}, author = {Alshahed, Muhammad}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/28d1920f20282840359fa6c89db67142e/puma-wartung}, eventdate = {2019-07-24}, interhash = {79327b293f4a4668cbe679ea23719a06}, intrahash = {8d1920f20282840359fa6c89db67142e}, isbn = {978-3-8440-6885-6}, keywords = {}, language = {eng}, publisher = {Shaker Verlag}, school = {Universität Stuttgart}, series = {Berichte aus der Halbleitertechnik}, supervisor = {Burghartz, Joachim}, supervisorgnd = {102992970X}, timestamp = {2023-08-31T14:23:10.000+0200}, title = {Gallium nitride high electron mobility transistors on native substrates for power switching applications : fabrication, characterization and modelling}, type = {Dissertation}, year = 2019 }