%0 Conference Paper
%1 monch2020intrinsic
%A Mönch, Stefan
%A Reiner, Richard
%A Waltereit, Patrick
%A Müller, Stefan
%A Quay, Rüdiger
%A Ambacher, Oliver
%A Kallfass, Ingmar
%B 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)
%C Piscataway
%D 2020
%I IEEE
%K ubs_10005 ubs_20007 ubs_30076 ubs_40346 unibibliografie wos
%P 254-257
%R 10.1109/ISPSD46842.2020.9170089
%T A 600V p-GaN Gate HEMT with Intrinsic Freewheeling Schottky-Diode in a GaN Power IC with Bootstrapped Driver and Sensors
%@ 978-1-7281-4836-6 and 978-1-7281-4837-3
@inproceedings{monch2020intrinsic,
added-at = {2022-03-28T15:20:24.000+0200},
address = {Piscataway},
author = {Mönch, Stefan and Reiner, Richard and Waltereit, Patrick and Müller, Stefan and Quay, Rüdiger and Ambacher, Oliver and Kallfass, Ingmar},
biburl = {https://puma.ub.uni-stuttgart.de/bibtex/2f43fcb3ec22784ec7cf5958316b62cd7/unibiblio},
booktitle = {2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)},
doi = {10.1109/ISPSD46842.2020.9170089},
eventdate = {2020-09-13/2020-09-18},
eventtitle = {2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)},
interhash = {e8393b0034aea35f3c4735105b9e67e7},
intrahash = {f43fcb3ec22784ec7cf5958316b62cd7},
isbn = {{978-1-7281-4836-6} and {978-1-7281-4837-3}},
keywords = {ubs_10005 ubs_20007 ubs_30076 ubs_40346 unibibliografie wos},
language = {eng},
pages = {254-257},
publisher = {IEEE},
timestamp = {2022-03-28T13:20:24.000+0200},
title = {A 600V p-GaN Gate HEMT with Intrinsic Freewheeling Schottky-Diode in a GaN Power IC with Bootstrapped Driver and Sensors},
venue = {Vienna, Austria},
year = 2020
}