University of Stuttgart; Helmholtz Association; Karlsruhe Institute of
Technology; Brandenburg University of Technology Cottbus; Leibniz
Institut fur Innovative Mikroelektronik (IHP)
%0 Journal Article
%1 weisshaupt2024lateral
%A Weißhaupt, David
%A Sürgers, Christoph
%A Bloos, Dominik
%A Funk, Hannes Simon
%A Oehme, Michael
%A Fischer, Gerda
%A Schubert, Markus Andreas
%A Wenger, Christian
%A Slageren, Joris van
%A Fischer, Inga Anita
%A Schulze, Jörg
%D 2024
%I Institute of Physics
%J Semiconductor science and technology
%K mult oa ubs_10003 ubs_10005 ubs_20003 ubs_20007 ubs_30035 ubs_30069 ubs_40059 ubs_40521 unibibliografie wos
%N 12
%P 125004
%R 10.1088/1361-6641/ad8d06
%T Lateral Mn5Ge3 spin-valve in contact with a high-
mobility Ge two-dimensional hole gas
%V 39
@article{weisshaupt2024lateral,
added-at = {2025-06-04T16:38:30.000+0200},
affiliation = {Sürgers, C (Corresponding Author), Karlsruhe Inst Technol, Phys Inst, D-76131 Karlsruhe, Germany.
Weisshaupt, David; Funk, Hannes Simon; Oehme, Michael; Schulze, Joerg, Univ Stuttgart, Inst Semicond Engn, D-70569 Stuttgart, Germany.
Suergers, Christoph; Fischer, Gerda, Karlsruhe Inst Technol, Phys Inst, D-76131 Karlsruhe, Germany.
Bloos, Dominik; van Slageren, Joris, Inst Phys Chem, Pfaffenwaldring 55, D-70569 Stuttgart, Germany.
Fischer, Inga Anita, Brandenburg Tech Univ Cottbus, Expt Phys \& Funct Mat, D-03046 Cottbus, Germany.
Schubert, Markus Andreas; Wenger, Christian, Leibniz Inst innovat Mikroelekt, Mat Res, IHP, D-15236 Frankfurt, Germany.},
affiliations = {University of Stuttgart; Helmholtz Association; Karlsruhe Institute of
Technology; Brandenburg University of Technology Cottbus; Leibniz
Institut fur Innovative Mikroelektronik (IHP)},
author = {Weißhaupt, David and Sürgers, Christoph and Bloos, Dominik and Funk, Hannes Simon and Oehme, Michael and Fischer, Gerda and Schubert, Markus Andreas and Wenger, Christian and Slageren, Joris van and Fischer, Inga Anita and Schulze, Jörg},
biburl = {https://puma.ub.uni-stuttgart.de/bibtex/2f1fc5fe709b98fa74fceffbd9df0967e/unibiblio},
doi = {10.1088/1361-6641/ad8d06},
interhash = {3778d7da5516e3338a4010ce6be4d680},
intrahash = {f1fc5fe709b98fa74fceffbd9df0967e},
issn = {{0268-1242} and {1361-6641}},
journal = {Semiconductor science and technology},
keywords = {mult oa ubs_10003 ubs_10005 ubs_20003 ubs_20007 ubs_30035 ubs_30069 ubs_40059 ubs_40521 unibibliografie wos},
language = {eng},
number = 12,
pages = 125004,
publisher = {Institute of Physics},
research-areas = {Engineering; Materials Science; Physics},
timestamp = {2025-06-04T16:38:30.000+0200},
title = {Lateral Mn5Ge3 spin-valve in contact with a high-
mobility Ge two-dimensional hole gas},
unique-id = {WOS:001351322100001},
volume = 39,
year = 2024
}
