%0 Conference Paper %1 burghartz1990sub30 %A Burghartz, Joachim N. %A Comfort, James H. %A Patton, Gary L. %A Cressler, John D. %A Meyerson, Bernard S. %A Sun, Jack Yuan-Chen %A Scilla, G. J. %A Warnock, James D. %A Ginsberg, Barry J. %A Jenkins, Keith A. %A Toh, Kai-Yap %A Harame, David L. %A Mader, Siegfried R. %B Electron Devices Meeting, 1990 : IEDM '90 : Technical Digest : International %C Piscataway, New Jersey %D 1990 %I IEEE %K INES firstnamemissing %P 297-300 %R 10.1109/IEDM.1990.237171 %T Sub-30 Ps ECL Circuits Using High-F-Sub-T Si and SiGe Epitaxial Base Transistors

@inproceedings{burghartz1990sub30, added-at = {2019-04-12T11:33:22.000+0200}, address = {Piscataway, New Jersey}, author = {Burghartz, Joachim N. and Comfort, James H. and Patton, Gary L. and Cressler, John D. and Meyerson, Bernard S. and Sun, Jack Yuan-Chen and Scilla, G. J. and Warnock, James D. and Ginsberg, Barry J. and Jenkins, Keith A. and Toh, Kai-Yap and Harame, David L. and Mader, Siegfried R.}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/2ba8d6a130db9de513770d8e402b3db98/kevin.konnerth}, booktitle = {Electron Devices Meeting, 1990 : IEDM '90 : Technical Digest : International}, doi = {10.1109/IEDM.1990.237171}, eventdate = {1990-12-09/1990-12-12}, eventtitle = {International Electron Devices Meeting 1990}, interhash = {aca5fdbca1eca27b59e06a2b8e50f17e}, intrahash = {ba8d6a130db9de513770d8e402b3db98}, issn = {0163-1918}, keywords = {INES firstnamemissing}, pages = {297-300}, publisher = {IEEE}, timestamp = {2019-04-12T09:47:37.000+0200}, title = {Sub-30 Ps ECL Circuits Using High-F-Sub-T Si and SiGe Epitaxial Base Transistors}, venue = {San Francisco, USA}, year = 1990 }