%0 Conference Paper %1 10509108 %A Koch, Dominik %A Fink, Tobias %A Nuzzo, Jeremy %A Barón, Kevin Muñoz %A Kallfass, Ingmar %B 2024 IEEE Applied Power Electronics Conference and Exposition (APEC) %D 2024 %K ILH myown %P 555-560 %R 10.1109/APEC48139.2024.10509108 %T PCB-Integrated Pickup-Coil for Overcurrent Detection in High-Current, Paralleled GaN HEMTs %X In this work an easy to integrate and low-cost solution for an overcurrent detection in a high-current half-bridge module based on paralleled 100V, 7mΩ GaN HEMTs is presented. The overcurrent detection is realized with a simple pickup-coil which is integrated into the carrier PCB adjacent to the GaN transistors. The pickup-coils have a sensitivity of around 12mV/A, which results in a peak voltage of above 1.5V at 111A switched current and is twice as high as the peak voltage at the rated current of 50A per HEMT. By a comprehensive finite element s-parameter simulation up to 3GHz, the main coupling parameters between the pickup-coils and the surrounding structures are identified. For lower frequencies below 100MHz an inductive coupling between transistor and pickup-coil is higher, while for higher frequencies the capacitive coupling between inlay and pickup-coil is dominanting. A simple signal evaluation circuit based on an integration amplifier and a fast comparator is presented, which allows a very fast and reliable detection of overcurrent events in 24ns. The presented pickup coil has a significantly increased sensitivity to parasitic effects and coupling due to the high bandwidth of above 400MHz, but demonstrates a very simple implementation and shows the advantages of a non-invasive measurement and scalability for higher voltage classes.

@inproceedings{10509108, abstract = {In this work an easy to integrate and low-cost solution for an overcurrent detection in a high-current half-bridge module based on paralleled 100V, 7mΩ GaN HEMTs is presented. The overcurrent detection is realized with a simple pickup-coil which is integrated into the carrier PCB adjacent to the GaN transistors. The pickup-coils have a sensitivity of around 12mV/A, which results in a peak voltage of above 1.5V at 111A switched current and is twice as high as the peak voltage at the rated current of 50A per HEMT. By a comprehensive finite element s-parameter simulation up to 3GHz, the main coupling parameters between the pickup-coils and the surrounding structures are identified. For lower frequencies below 100MHz an inductive coupling between transistor and pickup-coil is higher, while for higher frequencies the capacitive coupling between inlay and pickup-coil is dominanting. A simple signal evaluation circuit based on an integration amplifier and a fast comparator is presented, which allows a very fast and reliable detection of overcurrent events in 24ns. The presented pickup coil has a significantly increased sensitivity to parasitic effects and coupling due to the high bandwidth of above 400MHz, but demonstrates a very simple implementation and shows the advantages of a non-invasive measurement and scalability for higher voltage classes.}, added-at = {2024-05-07T08:38:43.000+0200}, author = {Koch, Dominik and Fink, Tobias and Nuzzo, Jeremy and Barón, Kevin Muñoz and Kallfass, Ingmar}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/2729c431fe0d217891f2aee8cbaba4493/dominikkoch}, booktitle = {2024 IEEE Applied Power Electronics Conference and Exposition (APEC)}, doi = {10.1109/APEC48139.2024.10509108}, interhash = {d776ff890d249e3de6282a656f599d46}, intrahash = {729c431fe0d217891f2aee8cbaba4493}, issn = {2470-6647}, keywords = {ILH myown}, month = feb, pages = {555-560}, timestamp = {2024-05-07T08:38:43.000+0200}, title = {PCB-Integrated Pickup-Coil for Overcurrent Detection in High-Current, Paralleled GaN HEMTs}, year = 2024 }