%0 Conference Paper %1 burghartz1988selective %A Burghartz, Joachim N. %A Ginsberg, Barry J. %A Mader, Siegfried R. %A Chen, Tze-Chiang %A Harame, David L. %B ESSDERC 88 : 18th European Solid State Device Research Conference, September 13 - 16, 1988, Montpellier (France) %C Piscataway, New Jersey %D 1988 %I IEEE %K INES %P C4-367-C4-370 %R 10.1051/jphyscol:1988476 %T Selective Epitaxy Base for Bipolar Transistors %@ 2-86883-099-4

@inproceedings{burghartz1988selective, added-at = {2019-04-16T10:21:35.000+0200}, address = {Piscataway, New Jersey}, author = {Burghartz, Joachim N. and Ginsberg, Barry J. and Mader, Siegfried R. and Chen, Tze-Chiang and Harame, David L.}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/27f0a2c8d171b458e7291abe69c3dd245/kevin.konnerth}, booktitle = {ESSDERC 88 : 18th European Solid State Device Research Conference, September 13 - 16, 1988, Montpellier (France) }, doi = {10.1051/jphyscol:1988476}, eventdate = {1988-09-13/1988-09-16}, eventtitle = {ESSDERC '88 : 18th European Solid State Device Research Conference}, interhash = {25ccd015022471f8d962026b7d377938}, intrahash = {7f0a2c8d171b458e7291abe69c3dd245}, isbn = {2-86883-099-4}, keywords = {INES}, pages = {C4-367-C4-370 }, publisher = {IEEE}, timestamp = {2019-04-16T08:31:33.000+0200}, title = {Selective Epitaxy Base for Bipolar Transistors}, venue = {Montpellier, France}, year = 1988 }