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Selective Epitaxy Base for Bipolar Transistors

, , , , and . ESSDERC 88 : 18th European Solid State Device Research Conference, September 13 - 16, 1988, Montpellier (France), page C4-367-C4-370. Piscataway, New Jersey, IEEE, (1988)
DOI: 10.1051/jphyscol:1988476

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A 27 GHz 20 ps PNP technology, , , , , , , , , and 2 other author(s). Technical digest : International Electron Devices Meeting 1989, IEDM, Washington, D.C. December 3 - 6, 1989, page 903-905. Piscataway, New Jersey, IEEE, (1989)Message from the Vice President, Science and Technology, IBM Research Division.. IBM Journal of Research and Development, 52 (3): 222-222 (2008)Selective Epitaxy Base for Bipolar Transistors, , , , and . ESSDERC 88 : 18th European Solid State Device Research Conference, September 13 - 16, 1988, Montpellier (France), page C4-367-C4-370. Piscataway, New Jersey, IEEE, (1988)