Compounds of silicon and homologues, 145. - Supersilyl Compounds of boron and homologues, 14. On the gallanyls R*3Ga2.bul. and R*4Ga3.bul. as well as gallanides R*3Ga2- and R*4Ga3- (R* = SitBu3) - syntheses, characterization, structures
The redn. of black-blue tris(supersilyl)digallanyl R*2Ga-GaR*.bul. (R* = SitBu3 = supersilyl) in org. solvents with Na, NaC10H8, or NaR* leads to deep-red Na tris(supersilyl)digallanide-THF (1/3) NaGa2R*3$\times$3THF = R*2Ga-GaR*Na(THF)3, which transforms in the presence of 18-crown-6 into deep-blue Na tetrakis(supersilyl)trigallanide-18-crown-6 (1/1)-THF (1/2) Na(18-C-6)(THF)2+R*2Ga-GaR*-GaR*-. The oxidn. of the latter anion with R*Br or TCNE as well as the reaction of the digallanyl R*3Ga2.bul. with R*Br leads to deep-green tetra(supersilyl)cyclotrigallanyl cyclo-R*Ga-GaR*2-GaR*.bul.. The latter radical thermolyzes at 100° to dark-violet tetrakis(supersilyl)-tetrahedro-tetragallane R*4Ga4 besides the digallanyl R*3Ga2.bul.. This is also prepd. from NaR* and GaCl3 or R*2GaCl, as well as by oxidn. of R*3Ga2-, and itself thermolyzes with formation of the tetrahedrane R*4Ga4. According to x-ray structure analyses of the mentioned compds., the Ga-Ga bond of the digallanide NaGa2R*3$\times$3THF (NMR spectroscopically obsd.) is comparably short (2.380 \AA), approaching a bond order of 2. In fact, it is distinctly shorter than the Ga-Ga bond (2.420 \AA) in the digallanyl R*3Ga2.bul. (EPR spectroscopically obsd.). The Ga atoms of the trigallanyl R*4Ga3.bul. (EPR spectroscopically obsd.) are located at the corners of a triangle with two shorter R*2Ga-GaR* sides (2.527 \AA) and a comparably longer R*Ga-GaR* basis (2.879 \AA). The mean value of the two Ga-Ga bonds in the trigallanide R*4Ga3- (NMR spectroscopically obsd.) is as long (2.53 \AA) as the short Ga-Ga bonds in R*4Ga3.bul.. The anion shows an intramol. CH3···Ga contact (C-Ga 2.10 \AA) between one peripheral Me group of the R*2Ga entity and the anionic Ga atom in R*2Ga-GaR*-GaR*-. on SciFinder(R)
%0 Journal Article
%1 Wiberg.2001
%A Wiberg, Nils
%A Blank, Thomas
%A Amelunxen, Kerstin
%A Noth, Heinrich
%A Knizek, Jorg
%A Habereder, Tassilo
%A Kaim, Wolfgang
%A Wanner, Matthias.
%D 2001
%J European Journal of Inorganic Chemistry
%K cluster crystal gallanide gallanide;gallium gallanide;supersilyl gallanyl prepn reaction reaction;mol structure supersilyl trinuclear
%N 7
%P 1719--1727
%R 10.1002/1099-0682(200107)2001:7\textless1719::AID-EJIC1719\textgreater3.0.CO;2-Q
%T Compounds of silicon and homologues, 145. - Supersilyl Compounds of boron and homologues, 14. On the gallanyls R*3Ga2.bul. and R*4Ga3.bul. as well as gallanides R*3Ga2- and R*4Ga3- (R* = SitBu3) - syntheses, characterization, structures
%X The redn. of black-blue tris(supersilyl)digallanyl R*2Ga-GaR*.bul. (R* = SitBu3 = supersilyl) in org. solvents with Na, NaC10H8, or NaR* leads to deep-red Na tris(supersilyl)digallanide-THF (1/3) NaGa2R*3$\times$3THF = R*2Ga-GaR*Na(THF)3, which transforms in the presence of 18-crown-6 into deep-blue Na tetrakis(supersilyl)trigallanide-18-crown-6 (1/1)-THF (1/2) Na(18-C-6)(THF)2+R*2Ga-GaR*-GaR*-. The oxidn. of the latter anion with R*Br or TCNE as well as the reaction of the digallanyl R*3Ga2.bul. with R*Br leads to deep-green tetra(supersilyl)cyclotrigallanyl cyclo-R*Ga-GaR*2-GaR*.bul.. The latter radical thermolyzes at 100° to dark-violet tetrakis(supersilyl)-tetrahedro-tetragallane R*4Ga4 besides the digallanyl R*3Ga2.bul.. This is also prepd. from NaR* and GaCl3 or R*2GaCl, as well as by oxidn. of R*3Ga2-, and itself thermolyzes with formation of the tetrahedrane R*4Ga4. According to x-ray structure analyses of the mentioned compds., the Ga-Ga bond of the digallanide NaGa2R*3$\times$3THF (NMR spectroscopically obsd.) is comparably short (2.380 \AA), approaching a bond order of 2. In fact, it is distinctly shorter than the Ga-Ga bond (2.420 \AA) in the digallanyl R*3Ga2.bul. (EPR spectroscopically obsd.). The Ga atoms of the trigallanyl R*4Ga3.bul. (EPR spectroscopically obsd.) are located at the corners of a triangle with two shorter R*2Ga-GaR* sides (2.527 \AA) and a comparably longer R*Ga-GaR* basis (2.879 \AA). The mean value of the two Ga-Ga bonds in the trigallanide R*4Ga3- (NMR spectroscopically obsd.) is as long (2.53 \AA) as the short Ga-Ga bonds in R*4Ga3.bul.. The anion shows an intramol. CH3···Ga contact (C-Ga 2.10 \AA) between one peripheral Me group of the R*2Ga entity and the anionic Ga atom in R*2Ga-GaR*-GaR*-. on SciFinder(R)
@article{Wiberg.2001,
abstract = {The redn. of black-blue tris(supersilyl)digallanyl [R*2Ga-GaR*].bul. (R* = SitBu3 = supersilyl) in org. solvents with Na, NaC10H8, or NaR* leads to deep-red Na tris(supersilyl)digallanide-THF (1/3) NaGa2R*3$\times$3THF = [R*2Ga-GaR*Na(THF)3], which transforms in the presence of 18-crown-6 into deep-blue Na tetrakis(supersilyl)trigallanide-18-crown-6 (1/1)-THF (1/2) [Na(18-C-6)(THF)2]+[R*2Ga-GaR*-GaR*]-. The oxidn. of the latter anion with R*Br or TCNE as well as the reaction of the digallanyl R*3Ga2.bul. with R*Br leads to deep-green tetra(supersilyl)cyclotrigallanyl cyclo-[R*Ga-GaR*2-GaR*].bul.. The latter radical thermolyzes at 100° to dark-violet tetrakis(supersilyl)-tetrahedro-tetragallane R*4Ga4 besides the digallanyl R*3Ga2.bul.. This is also prepd. from NaR* and GaCl3 or R*2GaCl, as well as by oxidn. of R*3Ga2-, and itself thermolyzes with formation of the tetrahedrane R*4Ga4. According to x-ray structure analyses of the mentioned compds., the Ga-Ga bond of the digallanide NaGa2R*3$\times$3THF (NMR spectroscopically obsd.) is comparably short (2.380 {\AA}), approaching a bond order of 2. In fact, it is distinctly shorter than the Ga-Ga bond (2.420 {\AA}) in the digallanyl R*3Ga2.bul. (EPR spectroscopically obsd.). The Ga atoms of the trigallanyl R*4Ga3.bul. (EPR spectroscopically obsd.) are located at the corners of a triangle with two shorter R*2Ga-GaR* sides (2.527 {\AA}) and a comparably longer R*Ga-GaR* basis (2.879 {\AA}). The mean value of the two Ga-Ga bonds in the trigallanide R*4Ga3- (NMR spectroscopically obsd.) is as long (2.53 {\AA}) as the short Ga-Ga bonds in R*4Ga3.bul.. The anion shows an intramol. CH3···Ga contact (C-Ga 2.10 {\AA}) between one peripheral Me group of the R*2Ga entity and the anionic Ga atom in [R*2Ga-GaR*-GaR*]-. [on SciFinder(R)]},
added-at = {2019-07-15T13:41:23.000+0200},
author = {Wiberg, Nils and Blank, Thomas and Amelunxen, Kerstin and Noth, Heinrich and Knizek, Jorg and Habereder, Tassilo and Kaim, Wolfgang and Wanner, Matthias.},
biburl = {https://puma.ub.uni-stuttgart.de/bibtex/21ff8e3bc461035ff577ac9ae71a0d8d1/b_schwederski},
doi = {10.1002/1099-0682(200107)2001:7{\textless}1719::AID-EJIC1719{\textgreater}3.0.CO;2-Q},
interhash = {48738ae0dec8fafcec977801858ca5c8},
intrahash = {1ff8e3bc461035ff577ac9ae71a0d8d1},
issn = {1434-1948},
journal = {European Journal of Inorganic Chemistry},
keywords = {cluster crystal gallanide gallanide;gallium gallanide;supersilyl gallanyl prepn reaction reaction;mol structure supersilyl trinuclear},
number = 7,
pages = {1719--1727},
timestamp = {2019-07-15T11:42:10.000+0200},
title = {Compounds of silicon and homologues, 145. - Supersilyl Compounds of boron and homologues, 14. On the gallanyls R*3Ga2.bul. and R*4Ga3.bul. as well as gallanides R*3Ga2- and R*4Ga3- (R* = SitBu3) - syntheses, characterization, structures},
year = 2001
}