Single-photon emitting devices have been identified as an important building block for applications in quantum information and quantum communication. They allow us to transduce and collect quantum information over a long distance via photons as so-called flying qubits. In addition, substrates like silicon carbide provide an excellent material platform for electronic devices. In this work, we combine these two features and show that one can drive single photon emitters within a silicon carbide p-i-n-diode. To achieve this, we specifically designed a lateral oriented diode. We find a variety of new color centers emitting non-classical lights in the visible and near-infrared range. One type of emitter can be electrically excited, demonstrating that silicon carbide can act as an ideal platform for electrically controllable single photon sources.
%0 Journal Article
%1 Widmann.2018
%A Widmann, Matthias
%A Niethammer, Matthias
%A Makino, Takahiro
%A Rendler, Torsten
%A Lasse, Stefan
%A Ohshima, Takeshi
%A Ul Hassan, Jawad
%A Tien Son, Nguyen
%A Lee, Sang-Yun
%A Wrachtrup, Jörg
%D 2018
%J Applied Physics Letters
%K pi3 wrachtrup
%N 23
%P 231103
%R 10.1063/1.5032291
%T Bright single photon sources in lateral silicon carbide light emitting diodes
%U https://doi.org/10.1063/1.5032291
%V 112
%X Single-photon emitting devices have been identified as an important building block for applications in quantum information and quantum communication. They allow us to transduce and collect quantum information over a long distance via photons as so-called flying qubits. In addition, substrates like silicon carbide provide an excellent material platform for electronic devices. In this work, we combine these two features and show that one can drive single photon emitters within a silicon carbide p-i-n-diode. To achieve this, we specifically designed a lateral oriented diode. We find a variety of new color centers emitting non-classical lights in the visible and near-infrared range. One type of emitter can be electrically excited, demonstrating that silicon carbide can act as an ideal platform for electrically controllable single photon sources.
@article{Widmann.2018,
abstract = {Single-photon emitting devices have been identified as an important building block for applications in quantum information and quantum communication. They allow us to transduce and collect quantum information over a long distance via photons as so-called flying qubits. In addition, substrates like silicon carbide provide an excellent material platform for electronic devices. In this work, we combine these two features and show that one can drive single photon emitters within a silicon carbide p-i-n-diode. To achieve this, we specifically designed a lateral oriented diode. We find a variety of new color centers emitting non-classical lights in the visible and near-infrared range. One type of emitter can be electrically excited, demonstrating that silicon carbide can act as an ideal platform for electrically controllable single photon sources.},
added-at = {2018-07-03T14:34:19.000+0200},
author = {Widmann, Matthias and Niethammer, Matthias and Makino, Takahiro and Rendler, Torsten and Lasse, Stefan and Ohshima, Takeshi and Ul Hassan, Jawad and Tien Son, Nguyen and Lee, Sang-Yun and Wrachtrup, Jörg},
biburl = {https://puma.ub.uni-stuttgart.de/bibtex/2d585f6c7331abd8e19aaba8b93feb85e/shirschmann},
doi = {10.1063/1.5032291},
interhash = {c615cd8a531cbcea01d19e560b01eebf},
intrahash = {d585f6c7331abd8e19aaba8b93feb85e},
issn = {0003-6951},
journal = {Applied Physics Letters},
keywords = {pi3 wrachtrup},
number = 23,
pages = 231103,
timestamp = {2018-07-03T12:38:11.000+0200},
title = {Bright single photon sources in lateral silicon carbide light emitting diodes},
url = {https://doi.org/10.1063/1.5032291},
volume = 112,
year = 2018
}
