%0 Journal Article %1 journals/tvlsi/LeeBS04 %A Lee, Dongwoo %A Blaauw, David T. %A Sylvester, Dennis %D 2004 %J IEEE Trans. VLSI Syst. %K dblp %N 2 %P 155-166 %T Gate oxide leakage current analysis and reduction for VLSI circuits. %U http://dblp.uni-trier.de/db/journals/tvlsi/tvlsi12.html#LeeBS04 %V 12

@article{journals/tvlsi/LeeBS04, added-at = {2018-07-31T00:00:00.000+0200}, author = {Lee, Dongwoo and Blaauw, David T. and Sylvester, Dennis}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/27a0fb9c2fa0e0c5bf1aa2fa3375fbfab/dblp}, interhash = {91675bb15c13665639eeac8db093aa9e}, intrahash = {7a0fb9c2fa0e0c5bf1aa2fa3375fbfab}, journal = {IEEE Trans. VLSI Syst.}, keywords = {dblp}, number = 2, pages = {155-166}, timestamp = {2019-09-27T06:53:40.000+0200}, title = {Gate oxide leakage current analysis and reduction for VLSI circuits.}, url = {http://dblp.uni-trier.de/db/journals/tvlsi/tvlsi12.html#LeeBS04}, volume = 12, year = 2004 }