GeSn as a group-IV material opens up new possibilities for realizing photonic device concepts in Si-compatible fabrication processes. Here we present results of the ellipsometric characterization of highly p- and n-type doped Ge0.95Sn0.05 alloys deposited on Si substrates investigated in the wavelength range from 1 to 16Â $\mu$m. We discuss the suitability of these films for integrated plasmonic applications in the infrared region.
%0 Journal Article
%1 Augel:16
%A Augel, L.
%A Fischer, I. A.
%A Hornung, F.
%A Dressel, M.
%A Berrier, A.
%A Oehme, M.
%A Schulze, J.
%D 2016
%I OSA
%J Opt. Lett.
%K Ge0.95Sn0.05 applications plasmonic
%N 18
%P 4398--4400
%R 10.1364/OL.41.004398
%T Ellipsometric characterization of doped Ge0.95Sn0.05 films in the infrared range for plasmonic applications
%U http://ol.osa.org/abstract.cfm?URI=ol-41-18-4398
%V 41
%X GeSn as a group-IV material opens up new possibilities for realizing photonic device concepts in Si-compatible fabrication processes. Here we present results of the ellipsometric characterization of highly p- and n-type doped Ge0.95Sn0.05 alloys deposited on Si substrates investigated in the wavelength range from 1 to 16Â $\mu$m. We discuss the suitability of these films for integrated plasmonic applications in the infrared region.
@article{Augel:16,
abstract = {GeSn as a group-IV material opens up new possibilities for realizing photonic device concepts in Si-compatible fabrication processes. Here we present results of the ellipsometric characterization of highly p- and n-type doped Ge0.95Sn0.05 alloys deposited on Si substrates investigated in the wavelength range from 1 to 16Â $\mu$m. We discuss the suitability of these films for integrated plasmonic applications in the infrared region.},
added-at = {2018-01-30T08:33:16.000+0100},
author = {Augel, L. and Fischer, I. A. and Hornung, F. and Dressel, M. and Berrier, A. and Oehme, M. and Schulze, J.},
biburl = {https://puma.ub.uni-stuttgart.de/bibtex/25a35f5fa51cb64c39fa4649644c1f616/ulrikeoffenbeck},
doi = {10.1364/OL.41.004398},
interhash = {2af4c6736b7aae79e7d6c66e1076b88f},
intrahash = {5a35f5fa51cb64c39fa4649644c1f616},
journal = {Opt. Lett.},
keywords = {Ge0.95Sn0.05 applications plasmonic},
month = sep,
number = 18,
pages = {4398--4400},
publisher = {OSA},
timestamp = {2018-03-08T14:20:48.000+0100},
title = {Ellipsometric characterization of doped Ge0.95Sn0.05 films in the infrared range for plasmonic applications},
url = {http://ol.osa.org/abstract.cfm?URI=ol-41-18-4398},
volume = 41,
year = 2016
}
