%0 Journal Article %1 Moench_ISPSD2020 %A Moench, S. %A Reiner, R. %A Waltereit, P. %A Quay, R. %A Ambacher, O. %A Kallfass, I. %D 2020 %J in Proc. International Symposium on Power Semiconductor Devices and ICs (ISPSD) %K imported %T A 600 V p-GaN Gate HEMT with Intrinsic Freewheeling Schottky-Diode in a GaN Power IC with Bootstrapped Driver and Sensors

@article{Moench_ISPSD2020, added-at = {2020-09-07T14:26:58.000+0200}, author = {Moench, S. and Reiner, R. and Waltereit, P. and Quay, R. and Ambacher, O. and Kallfass, I.}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/274526a34504df66d53ba56696c76c29f/ingmarkallfass}, interhash = {07a1c2ed5ee2bf6ae6ccd4dc094573a3}, intrahash = {74526a34504df66d53ba56696c76c29f}, journal = {in Proc. International Symposium on Power Semiconductor Devices and ICs (ISPSD)}, keywords = {imported}, timestamp = {2022-11-04T10:48:48.000+0100}, title = {{A 600 V p-GaN Gate HEMT with Intrinsic Freewheeling Schottky-Diode in a GaN Power IC with Bootstrapped Driver and Sensors}}, year = 2020 }