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1Switched Capacitors Flyback Converter
I. Aoulad, E. Carrizales, and I. Kallfass. in Proc. 19 th 2025 International Conference on Compatibility, Power Electronics, and Power Engineering (CPE-POWERENG), (May 2025)
3 months ago by @ingmarkallfass
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1Nonlinear Output Capacitance of Bidirectional Gallium Nitride Power Switches
M. Bosch, D. Koch, and I. Kallfass. in Proc. IEEE Applied Power Electronics Conference and Exposition (APEC), Atlanta, Georgia, (March 2025)
3 months ago by @ingmarkallfass
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1Comparison of Compact Power Amplifier Designs for High Frequency Resonant Wireless Power Transfer Systems at 6.78 MHz Using High-Q Resonators
M. Ruess, D. Koch, and I. Kallfass. in Proc. IEEE Applied Power Electronics Conference and Exposition (APEC), Atlanta, Georgia, (March 2025)
3 months ago by @ingmarkallfass
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1High Capacity Terahertz Communication Links Combining Photonic and Electronic Technologies in the Transmit-Receive Frontend
I. Kallfass, I. Dan, P. Szriftgiser, and G. Ducournau. Symposium on Radio and Optical Networks Convergence - Expectations and Challenges in Practical Applications Symposium on Radio and Optical Networks Convergence - Expectations and Challenges in Practical Applications, Waseda University, Tokio,, (February 2025)
3 months ago by @ingmarkallfass
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1Towards System-Level Modeling of Broadband Sub-THz Amplifiers for Wireless Communication
S. Haussmann, D. Wrana, L. Samara, T. Zugno, and I. Kallfass. in Proc. IEEE Radio and Wireless Symposium, (January 2025)
3 months ago by @ingmarkallfass
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1Broadband H-Band Power Amplifier with Optimum Intermediate Splitter and Combiner Impedance
T. Ufschlag, B. Schoch, L. Gebert, D. Wrana, R. Lozar, A. Tessmann, and I. Kallfass. in Proc. IEEE Radio and Wireless Symposium, (January 2025)
3 months ago by @ingmarkallfass
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1Unraveling the Drain-Voltage Dependency of the Dynamic On-State Resistance of GaN-HEMTs
M. Weiser, U. Vogel, D. Miller, R. Schnitzler, T. Fink, and I. Kallfass. in Proc. ECCE Europe, Birmingham, (2025)
3 months ago by @ingmarkallfass
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1A H-Band High-Pass Distributed Amplifier with a Bandwidth of 80 GHz and over 4 % PAE
L. Gebert, B. Schoch, D. Wrana, T. Ufschlag, S. Haussmann, A. Tessmann, and I. Kallfass. in Proc. German Microwave Conference (GeMIC), Dresden, (2025)
3 months ago by @ingmarkallfass
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1On-State Voltage Sensing of Fast-Switching Power Transistors: Evaluation, Challenges and Advanced Design Considerations
M. Weiser, J. Tausk, and I. Kallfass. IEEE Transactions on Power Electronics, (2025)
3 months ago by @ingmarkallfass
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measurement;Circuits;Accuracy;Semiconductor
circuits;Power
Voltage
measurement;Temperature
measurement;semiconductor
transistors;on-state
characterization
measurement;Transistors;Oscilloscopes;Clamps;Switching
voltage
device
measurement;Circuits;Accuracy;Semiconductorcircuits;PowerVoltagemeasurement;Temperaturemeasurement;semiconductortransistors;on-statecharacterizationmeasurement;Transistors;Oscilloscopes;Clamps;Switchingvoltagedevice
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1An Accurate Simulation Model for Silicon Carbide Power Devices Based on BSIM3 Including Thermal Effects and Package Parasitics
M. Weiser, D. Koch, and I. Kallfass. in Proc. PCIM Europe Conference, (2025)
3 months ago by @ingmarkallfass
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1Novel 2.5-64 GHz Nonuniform Distributed Power Detector in 130 nm SiGe BiCMOS
M. Neff, B. Oezat, S. P., B. Schoch, and I. Kallfass. in Proceedings European Microwave Integrated Circuits Conference (EuMIC), Utrecht, (2025)
3 months ago by @ingmarkallfass
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1Sub-THz Power Amplifiers: Measurements, Behavioral Modeling and Predistortion Algorithms
L. Samara, S. Haussmann, E. Tufa, A. Amico, T. Zugno, I. Kallfass, and T. Kuerner. IEEE Trans. Terahertz Science and Technology, (2025)
3 months ago by @ingmarkallfass
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1Gallium-Nitride-Based E-Band Power Detector
T. Ufschlag, B. Schoch, D. Wrana, D. Schwantusche, F. van Raay, P. Brueckner, and I. Kallfass. in Proc. German Microwave Conference (GeMIC), Dresden, (2025)
3 months ago by @ingmarkallfass
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1Coaxial Gate Loop for Fast-Switching GaN Applications
M. Bosch, J. Nuzzo, D. Koch, and I. Kallfass. in Proc. ECCE Europe, Birmingham, (2025)
3 months ago by @ingmarkallfass
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1Parameter Dependent Anaylsis of Gate Switching Instability in SiC MOSFETs
R. Schnitzler, T. Fink, D. Koch, D. Halmer, and I. Kallfass. in Proc. ECCE Europe, Birmingham, (2025)
3 months ago by @ingmarkallfass
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1A Superheterodyne 300 GHz InGaAs Receiver and Transmitter Chipset for 6G and Beyond Applications
L. Gebert, B. Schoch, T. Ufschlag, D. Wrana, S. Haussmann, L. John, S. Wagner, and I. Kallfass. in Proceedings European Microwave Integrated Circuits Conference (EuMIC), Utrecht, (2025)
3 months ago by @ingmarkallfass
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1Intermodulation Distortion Analysis in Cascaded D-Band GaN Amplifiers
B. Schoch, S. Haussmann, M. Guenter, T. Ufschlag, P. Neininger, D. Schwantusche, and I. Kallfass. in proc. Int. Conf. on Infrared, Millimeter, and Terahertz Waves (IRMMW), Espoo, Finland, (2025)
3 months ago by @ingmarkallfass
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1A Novel Compact Model Describing Current-Voltage Characteristics of Monolithic Bidirectional GaN Power HEMTs
M. Haitz, C. Salcines, M. Basler, R. Reiner, S. Moench, and I. Kallfass. in Proc. ECCE Europe, Birmingham, (2025)
3 months ago by @ingmarkallfass
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1Effects of Delay on the Hold-In and Pull-In Range of Quadrature and Binary Costas Loops for Ultrawideband Receiver Synchronization
J. Wörmann, and I. Kallfass. IEEE Transactions on Microwave Theory and Techniques, (2025)
3 months ago by @ingmarkallfass
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phase
(CR);Costas
Phase
downconversion;hold-in
shift
keying;Mathematical
synchronization
loop;delay
range;phase-locked
recovery
(QPSK);receiver
effects;Binary
frequency;Synchronization;Delay
models;Receivers;Filters;Radio
loop
(BPSK);carrier
range;quadrature
effects;direct
loops;Phase
keying
(PLL);pull-in
keying;Delays;Binary
locked
phase(CR);CostasPhasedownconversion;hold-inshiftkeying;Mathematicalsynchronizationloop;delayrange;phase-lockedrecovery(QPSK);receivereffects;Binaryfrequency;Synchronization;Delaymodels;Receivers;Filters;Radioloop(BPSK);carrierrange;quadratureeffects;directloops;Phasekeying(PLL);pull-inkeying;Delays;Binarylocked
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1Active Voltage Probe for Direct Measurement of Emitted Noise of Power Semiconductors
R. Kragl, K. Oberdieck, K. Spanos, S. Beushausen, and I. Kallfass. in Proc. IEEE Energy Conversion Conference and Expo (ECCE 2025), (2025)
3 months ago by @ingmarkallfass
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PUMA

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1Switched Capacitors Flyback Converter

1Nonlinear Output Capacitance of Bidirectional Gallium Nitride Power Switches

1Comparison of Compact Power Amplifier Designs for High Frequency Resonant Wireless Power Transfer Systems at 6.78 MHz Using High-Q Resonators

1High Capacity Terahertz Communication Links Combining Photonic and Electronic Technologies in the Transmit-Receive Frontend

1Towards System-Level Modeling of Broadband Sub-THz Amplifiers for Wireless Communication

1Broadband H-Band Power Amplifier with Optimum Intermediate Splitter and Combiner Impedance

1Unraveling the Drain-Voltage Dependency of the Dynamic On-State Resistance of GaN-HEMTs

1A H-Band High-Pass Distributed Amplifier with a Bandwidth of 80 GHz and over 4 % PAE

1On-State Voltage Sensing of Fast-Switching Power Transistors: Evaluation, Challenges and Advanced Design Considerations

1An Accurate Simulation Model for Silicon Carbide Power Devices Based on BSIM3 Including Thermal Effects and Package Parasitics

1Novel 2.5-64 GHz Nonuniform Distributed Power Detector in 130 nm SiGe BiCMOS

1Sub-THz Power Amplifiers: Measurements, Behavioral Modeling and Predistortion Algorithms

1Gallium-Nitride-Based E-Band Power Detector

1Coaxial Gate Loop for Fast-Switching GaN Applications

1Parameter Dependent Anaylsis of Gate Switching Instability in SiC MOSFETs

1A Superheterodyne 300 GHz InGaAs Receiver and Transmitter Chipset for 6G and Beyond Applications

1Intermodulation Distortion Analysis in Cascaded D-Band GaN Amplifiers

1A Novel Compact Model Describing Current-Voltage Characteristics of Monolithic Bidirectional GaN Power HEMTs

1Effects of Delay on the Hold-In and Pull-In Range of Quadrature and Binary Costas Loops for Ultrawideband Receiver Synchronization

1Active Voltage Probe for Direct Measurement of Emitted Noise of Power Semiconductors

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