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A 122-GHz SiGe-Based Signal-Generation Chip Employing a Fundamental-Wave Oscillator With Capacitive Feedback Frequency-Enhancement.

, , and . J. Solid-State Circuits, 46 (9): 2009-2020 (2011)

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A Low Phase Noise, Wide Tuning Range 20GHz Magnetic-Coupled Hartley-VCO in a 28nm CMOS Technology., , , , , , and . RWS, page 1-3. IEEE, (2019)A 122-GHz SiGe-Based Signal-Generation Chip Employing a Fundamental-Wave Oscillator With Capacitive Feedback Frequency-Enhancement., , and . J. Solid-State Circuits, 46 (9): 2009-2020 (2011)Low Power Wideband Receiver and Transmitter Chipset for mm-Wave Imaging in SiGe Bipolar Technology., , , , , , , , , and 2 other author(s). J. Solid-State Circuits, 47 (5): 1175-1184 (2012)An 84 GHz Bandwidth and 20 dB Gain Broadband Amplifier in SiGe Bipolar Technology., , , , , , , and . J. Solid-State Circuits, 42 (10): 2099-2106 (2007)Dielectric thinning model applied to metal insulator metal capacitors with Al2O3 dielectric., , , , , and . Microelectronics Reliability, 49 (12): 1520-1528 (2009)38 GHz low-power static frequency divider in SiGe bipolar technology., , , , and . ISCAS (4), page 413-416. IEEE, (2002)SiGe BiCMOS technology and circuits for active safety systems., , , , , and . VLSI-DAT, page 1-4. IEEE, (2014)A 79GHz SiGe-Bipolar Spread-Spectrum TX for Automotive Radar., , , , , , , and . ISSCC, page 430-613. IEEE, (2007)A 3.8-mW 2.5-GHz dual-modulus prescaler in a 0.8 µm silicon bipolar production technology., , , and . ISLPED, page 20-23. ACM, (1998)