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A 56-65 GHz High-power Amplifier MMIC using 100 nm AlGaN/GaN Dual-gate HEMTs

, , , , , and . in Proc. European Micrwoave Integrated Circuit Conf., Manchester, (2011)

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Q- and E-band Amplifier MMICs for Satellite Communication, , , , , , , and . in Proc. IEEE Int. Microwave Symposium, Tampa, (2014)Metamorphic HEMT Technology for Submillimter-Wave MMIC Applications, , , , , , , and . in Proc. 22nd International Conference on Indium Phosphide and Related Materials, Piscataway, NJ, (May 2010)A 56-65 GHz High-power Amplifier MMIC using 100 nm AlGaN/GaN Dual-gate HEMTs, , , , , and . in Proc. European Micrwoave Integrated Circuit Conf., Manchester, (2011)A 40 to 60 GHz Broadband High-power Amplifier MMIC in 100 nm AlGaN/GaN HEMT Technology, , , , , and . in Proc. European Microwave Conf., Amsterdam, (2012)Metamorphic HEMT Technology for Low-noise Applications, , , , , , , , , and 1 other author(s). in Proc. 20th Int. Conf. on Indium Phosphide and Related Materials, (2009)A High-gain High-power Amplifier MMIC for V-band Applications using 100 nm AlGaN/GaN Dual-gate HEMTs, , , , , , , , and . Int. Journal of Microwave and Wireless Technologies, (2012)A fully scalable compact Small-Signal Modeling approach for 100 nm AlGaN/GaN HEMTs, , , , , , and . in Proc. European Microwave Week, Nuremberg, (2013)