%0 Journal Article %1 Leuther:05 %A Leuther, A. %A Tessmann, A. %A Kallfass, I. %A Massler, H. %A Loesch, R. %A Schlechtweg, M. %A Mikulla, M. %A Ambacher, O. %D 2010 %J in Proc. 22nd International Conference on Indium Phosphide and Related Materials, Piscataway, NJ %K imported %P 425--429 %T Metamorphic HEMT Technology for Submillimter-Wave MMIC Applications %X Metamorphic high electron mobility transistor (mHEMT) technologies with 50 and 35 nm gate length were developed for the fabrication of submillimeter-wave monolithic integrated circuits (S-MMICs) operating at 300 GHz and beyond. Heterostructures with very high electron sheet density of 6.1*1012 cm-2 and 9800 cm2/Vs electron mobility were grown on 4� GaAs substrates using a graded quaternary InAlGaAs buffer layer. For proper device scaling channel-gate distance and source resistance were reduced. Maximum transconduction of 2500 mS/mm and a transit frequency of 515 GHz were achieved for the 35 nm mHEMT with 2 * 10 �m gate-width. Already the 50 nm technology allows the realization of S-MMIC operation frequencies up to the probe caused measurement limit of 320 GHz. A compact four stage H band amplifier circuit based on a grounded coplanar waveguide (GCPW) layout is presented in 50 and 35 nm technology, respectively. The 50 nm mHEMT amplifier has a linear gain of 19.5 dB at 320 GHz and more than 15 dB between 240 and 320 GHz. The same amplifier utilizing 35 nm gate length transistors achieves more than 20 dB gain within the entire H-band from 220 to 320 GHz.

@article{Leuther:05, abstract = {Metamorphic high electron mobility transistor (mHEMT) technologies with 50 and 35 nm gate length were developed for the fabrication of submillimeter-wave monolithic integrated circuits (S-MMICs) operating at 300 GHz and beyond. Heterostructures with very high electron sheet density of 6.1*1012 cm-2 and 9800 cm2/Vs electron mobility were grown on 4� GaAs substrates using a graded quaternary InAlGaAs buffer layer. For proper device scaling channel-gate distance and source resistance were reduced. Maximum transconduction of 2500 mS/mm and a transit frequency of 515 GHz were achieved for the 35 nm mHEMT with 2 * 10 �m gate-width. Already the 50 nm technology allows the realization of S-MMIC operation frequencies up to the probe caused measurement limit of 320 GHz. A compact four stage H band amplifier circuit based on a grounded coplanar waveguide (GCPW) layout is presented in 50 and 35 nm technology, respectively. The 50 nm mHEMT amplifier has a linear gain of 19.5 dB at 320 GHz and more than 15 dB between 240 and 320 GHz. The same amplifier utilizing 35 nm gate length transistors achieves more than 20 dB gain within the entire H-band from 220 to 320 GHz.}, added-at = {2020-09-07T14:26:58.000+0200}, author = {Leuther, A. and Tessmann, A. and Kallfass, I. and Massler, H. and Loesch, R. and Schlechtweg, M. and Mikulla, M. and Ambacher, O.}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/2fc76ed9aa6bb5233849d22ddfd610f6f/ingmarkallfass}, interhash = {c288cb0585258bba0d2af1887814df86}, intrahash = {fc76ed9aa6bb5233849d22ddfd610f6f}, journal = {in Proc. 22nd International Conference on Indium Phosphide and Related Materials, Piscataway, NJ}, keywords = {imported}, month = may, pages = {425--429}, timestamp = {2025-05-26T10:46:15.000+0200}, title = {{Metamorphic HEMT Technology for Submillimter-Wave MMIC Applications}}, year = 2010 }