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High-Speed Reconfigurable Circuits for Multirate Systems in SiGe HBT Technology.

, , , , , , , , , and . Proceedings of the IEEE, 103 (7): 1181-1196 (2015)

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Carry Chains for Ultra High-Speed SiGe HBT Adders., , , , , , and . IEEE Trans. on Circuits and Systems, 58-I (9): 2201-2210 (2011)Design of BiCMOS SRAMs for high-speed SiGe applications., , , , , , , , and . IET Circuits, Devices & Systems, 8 (6): 487-498 (2014)Design of High-Speed Register Files Using SiGe HBT BiCMOS Technology., , , , , , , , and . IEEE Trans. on Circuits and Systems, 61-II (3): 178-182 (2014)A 40 Gs/s Time Interleaved ADC Using SiGe BiCMOS Technology., , , , , and . J. Solid-State Circuits, 45 (2): 380-390 (2010)A three-dimensional DRAM using floating body cell in FDSOI devices., , , , , , and . DDECS, page 159-162. IEEE, (2012)High-Speed Reconfigurable Circuits for Multirate Systems in SiGe HBT Technology., , , , , , , , , and . Proceedings of the IEEE, 103 (7): 1181-1196 (2015)Correction to Ä 40 GS/s Time Interleaved ADC Using SiGe BiCMOS Technology"., , , , , and . J. Solid-State Circuits, 45 (10): 2210 (2010)140 Gb/s Serializer Using Clock Doublers in 90 nm SiGe Technology., , , , , and . J. Solid-State Circuits, 50 (11): 2703-2713 (2015)Thermal Modeling of 3-D Stacked DRAM Over SiGe HBT BiCMOS CPU., , , , , , , , , and . IEEE Access, (2015)