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Spectrally and time-resolved cathodoluminescence microscopy of semipolar InGaN SQW on (11<span style=text-decoration: overline;>2</span>2) and (10<span style=text-decoration: overline;>1</span>1) pyramid facets, , , , , , , , , and 2 other author(s). (2011)Measured and Simulated Characteristics of AlGaN/GaN-HEMTs, , , , , , , , , and 1 other author(s). (2001)Advanced large-signal modeling of GaN-HEMTs, , , , , , , and . IEEE Lester Eastman Conference on High Performance Devices, page 172--180. Newark, DE, USA, (2002)Time-resolved photoluminescence of semipolar GaInN/GaN multiquantum well structures, , , , , , , , and . (2006)Short-channel AlGaN/GaN HEMTs with 70 nm T-gate, , , , , , , , , and . Electronics Letters, 35 (23): 2018 (1999)Determination of small-signal parameters of GaN-based HEMTs, , , , , , , , , and 4 other author(s). IEEE/Cornell Conference on High Performance Devices, page 115--122. Ithaca, NY, USA, (2000)Dynamic measurements on narrow linewidth complex coupled 1.55 mm DFB lasers with gain and index grating in antiphase, , , , , , , , and . Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM), page 25--28. Davos, Switzerland, (1999)Fabrication Approach for Antiphase Narrow Linewidth Complex Coupled 1.55 µm DFB Lasers, , , , , , , and . Electronics Letters, 35 (2): 146-148 (1999)Dynamic Large-Signal I-V Analysis and Non-Linear Modelling of Algan/Gan HEMTS, , , , , , , , , and 1 other author(s). European Microwave Conference (EuMC), page 631--634. London, England, IEEE, (2001)Bias-dependence of AlGaN/GaN-HEMT small-signal equivalent circuit elements, , , , , , , , and . (2000)