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Disambiguation of "Selberherr, Siegfried"

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Using Temporary Explicit Meshes for Direct Flux Calculation on Implicit Surfaces.

, , , and . ICCS, volume 108 of Procedia Computer Science, page 245-254. Elsevier, (2017)

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Prof. Dr. Siegfried Dietrich University of Stuttgart

Berndt Siegfried Böpple University of Stuttgart

Siegfried Albrecht University of Stuttgart

Prof. Dr. Siegfried Franke University of Stuttgart

Siegfried Gerber University of Stuttgart

 

Other publications of authors with the same name

Modern Concepts for High-Perfomance Scientific Computing - Library Centric Application Design., , and . ICSOFT (SE), page 100-107. INSTICC Press, (2007)Three-dimensional simulation of HPCVD-linking continuum transport and reaction kinetics with topography simulation., , , and . IEEE Trans. on CAD of Integrated Circuits and Systems, 18 (12): 1741-1749 (1999)Three-Dimensional MOS Device Simulation on a Connection Machine., , and . PPSC, page 388-393. SIAM, (1991)Monte Carlo algorithms for stationary device simulations., , and . Mathematics and Computers in Simulation, 62 (3-6): 453-461 (2003)On the interplay between meshing and discretization inthree-dimensional diffusion simulation., , , , and . IEEE Trans. on CAD of Integrated Circuits and Systems, 19 (11): 1233-1240 (2000)Calculation of contact currents in device simulation., , and . IEEE Trans. on CAD of Integrated Circuits and Systems, 11 (1): 128-136 (1992)Mixed-element decomposition method for three-dimensional grid adaptation., and . IEEE Trans. on CAD of Integrated Circuits and Systems, 17 (7): 561-572 (1998)On smoothing three-dimensional Monte Carlo ion implantation simulation results., , and . IEEE Trans. on CAD of Integrated Circuits and Systems, 22 (7): 879-883 (2003)Implications of Analytical Investigations About the Semiconductor Equations on Device Modeling Programs., and . IEEE Trans. on CAD of Integrated Circuits and Systems, 3 (1): 52-64 (1984)Shared-memory parallelization of the semi-ordered fast iterative method., , , and . SpringSim (HPS), page 217-224. SCS/ACM, (2015)