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Disambiguation of "Stangoni, Maria"

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On the behaviour of the selective iodine-based gold etch for the failure analysis of aged optoelectronic devices.

, , , , and . Microelectronics Reliability, 43 (9-11): 1771-1776 (2003)

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Claudia Marianowski University of Stuttgart

apl. Prof. Dr. Maria Fyta University of Stuttgart

Maria Papadimitraki University of Stuttgart

Maria Hammer University of Stuttgart

Maria Barnhart University of Stuttgart

 

Other publications of authors with the same name

A New Procedure to Define the Zero-Field Condition and to Delineate pn-Junctions in Silicon Devices by Scanning Capacitance Microscopy., , and . Microelectronics Reliability, 43 (9-11): 1651-1656 (2003)On the Use of Neural Networks to Solve the Reverse Modelling Problem for the Quantification of Dopant Profiles Extracted by Scanning Probe Microscopy Techniques., , , , and . Microelectronics Reliability, 44 (9-11): 1703-1708 (2004)On the behaviour of the selective iodine-based gold etch for the failure analysis of aged optoelectronic devices., , , , and . Microelectronics Reliability, 43 (9-11): 1771-1776 (2003)Design of optimum electron beam irradiation processes for the reliability of electric cables used in critical applications., , , , and . Microelectronics Reliability, 51 (9-11): 1479-1483 (2011)Simulation and Experimental Validation of Scanning Capacitance Microscopy Measurements across Low-doped Epitaxial PN-Junction., , , , and . Microelectronics Reliability, 42 (9-11): 1701-1706 (2002)Two-dimensional Dopant Profiling and Imaging of 4H Silicon Carbide Devices by Secondary Electron Potential Contrast., , , and . Microelectronics Reliability, 45 (9-11): 1499-1504 (2005)2D Dopant Profiling on 4H Silicon Carbide P+N Junction by Scanning Capacitance and Scanning Electron Microscopy., , , , , and . Microelectronics Reliability, 44 (9-11): 1681-1686 (2004)Ensuring the reliability of electron beam crosslinked electric cables by the optimization of the dose depth distribution with Monte Carlo simulation., , , , and . Microelectronics Reliability, 49 (9-11): 972-976 (2009)Assessment of the Analytical Capabilities of Scanning Capacitance and Scanning Spreading Resistance Microscopy Applied to Semiconductor Devices., , and . Microelectronics Reliability, 45 (9-11): 1532-1537 (2005)