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A 19 nm 112.8 mm2 64 Gb Multi-Level Flash Memory With 400 Mbit/sec/pin 1.8 V Toggle Mode Interface., , , , , , , , , and 22 other author(s). J. Solid-State Circuits, 48 (1): 159-167 (2013)An Embedded DRAM Technology for High-Performance NAND Flash Memories., , , , , and . J. Solid-State Circuits, 47 (2): 536-546 (2012)A 19nm 112.8mm2 64Gb multi-level flash memory with 400Mb/s/pin 1.8V Toggle Mode interface., , , , , , , , , and 45 other author(s). ISSCC, page 422-424. IEEE, (2012)A 5.6MB/s 64Gb 4b/Cell NAND Flash memory in 43nm CMOS., , , , , , , , , and 47 other author(s). ISSCC, page 246-247. IEEE, (2009)An embedded DRAM technology for high-performance NAND flash memories., , , , , and . ISSCC, page 504-505. IEEE, (2011)A 512Gb 3-bit/Cell 3D Flash Memory on 128-Wordline-Layer with 132MB/s Write Performance Featuring Circuit-Under-Array Technology., , , , , , , , , and 42 other author(s). ISSCC, page 218-220. IEEE, (2019)A 70 nm 16 Gb 16-Level-Cell NAND flash Memory., , , , , , , , , and 18 other author(s). J. Solid-State Circuits, 43 (4): 929-937 (2008)A 1.33Tb 4-bit/Cell 3D-Flash Memory on a 96-Word-Line-Layer Technology., , , , , , , , , and 42 other author(s). ISSCC, page 210-212. IEEE, (2019)A 1.33-Tb 4-Bit/Cell 3-D Flash Memory on a 96-Word-Line-Layer Technology., , , , , , , , , and 39 other author(s). J. Solid-State Circuits, 55 (1): 178-188 (2020)