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A 1.33-Tb 4-Bit/Cell 3-D Flash Memory on a 96-Word-Line-Layer Technology., , , , , , , , , and 39 other author(s). J. Solid-State Circuits, 55 (1): 178-188 (2020)An embedded DRAM technology for high-performance NAND flash memories., , , , , and . ISSCC, page 504-505. IEEE, (2011)A 120mm2 16Gb 4-MLC NAND Flash Memory with 43nm CMOS Technology., , , , , , , , , and 27 other author(s). ISSCC, page 430-431. IEEE, (2008)A 1.33Tb 4-bit/Cell 3D-Flash Memory on a 96-Word-Line-Layer Technology., , , , , , , , , und 42 andere Autor(en). ISSCC, Seite 210-212. IEEE, (2019)A 19 nm 112.8 mm2 64 Gb Multi-Level Flash Memory With 400 Mbit/sec/pin 1.8 V Toggle Mode Interface., , , , , , , , , und 22 andere Autor(en). J. Solid-State Circuits, 48 (1): 159-167 (2013)An Embedded DRAM Technology for High-Performance NAND Flash Memories., , , , , und . J. Solid-State Circuits, 47 (2): 536-546 (2012)A 19nm 112.8mm2 64Gb multi-level flash memory with 400Mb/s/pin 1.8V Toggle Mode interface., , , , , , , , , und 45 andere Autor(en). ISSCC, Seite 422-424. IEEE, (2012)