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Energy efficiency deterioration by variability in SRAM and circuit techniques for energy saving without voltage reduction.

, , , , , , , and . ICICDT, page 1-4. IEEE, (2012)

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A 27% active and 85% standby power reduction in dual-power-supply SRAM using BL power calculator and digitally controllable retention circuit., , , , , , , , , and 1 other author(s). ISSCC, page 320-321. IEEE, (2013)A 47% access time reduction with a worst-case timing-generation scheme utilizing a statistical method for ultra low voltage SRAMs., , , , , , , and . VLSIC, page 100-101. IEEE, (2012)A 27% Active and 85% Standby Power Reduction in Dual-Power-Supply SRAM Using BL Power Calculator and Digitally Controllable Retention Circuit., , , , , , , , , and 1 other author(s). J. Solid-State Circuits, 49 (1): 118-126 (2014)Energy efficiency deterioration by variability in SRAM and circuit techniques for energy saving without voltage reduction., , , , , , , and . ICICDT, page 1-4. IEEE, (2012)A process-variation-tolerant dual-power-supply SRAM with 0.179µm2 Cell in 40nm CMOS using level-programmable wordline driver., , , , , , , , , and 3 other author(s). ISSCC, page 458-459. IEEE, (2009)DFT techniques for memory macro with built-in ECC., , , and . MTDT, page 109-114. IEEE Computer Society, (2005)Direct Cell-Stability Test Techniques for an SRAM Macro with Asymmetric Cell-Bias-Voltage Modulation., , , , , , and . ITC, page 1-7. IEEE Computer Society, (2008)A Low-Supply-Voltage-Operation SRAM With HCI Trimmed Sense Amplifiers., , , , , and . J. Solid-State Circuits, 45 (11): 2341-2347 (2010)A Digitized Replica Bitline Delay Technique for Random-Variation-Tolerant Timing Generation of SRAM Sense Amplifiers., , , , , , , , and . J. Solid-State Circuits, 46 (11): 2545-2551 (2011)A Single-Power-Supply 0.7V 1GHz 45nm SRAM with An Asymmetrical Unit-×-ratio Memory Cell., , , , , , , , , and 1 other author(s). ISSCC, page 382-383. IEEE, (2008)