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Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure.

M. Meneghini, O. Hilt, C. Fleury, R. Silvestri, M. Capriotti, G. Strasser, D. Pogany, E. Bahat-Treidel, F. Brunner, A. Knauer, J. Würfl, I. Rossetto, E. Zanoni, G. Meneghesso, and S. Dalcanale. Microelectronics Reliability, (2016)

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E-mode AlGaN/GaN True-MOS, with high-k ZrO2 gate insulator.M. Capriotti, C. Fleury, O. Bethge, M. Rigato, S. Lancaster, D. Pogany, G. Strasser, E. Bahat-Treidel, O. Hilt, F. Brunner and 1 other author(s). ESSDERC, page 60-63. IEEE, (2015)Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure.M. Meneghini, O. Hilt, C. Fleury, R. Silvestri, M. Capriotti, G. Strasser, D. Pogany, E. Bahat-Treidel, F. Brunner, A. Knauer and 5 other author(s). Microelectronics Reliability, (2016)High temperature performances of normally-off p-GaN gate AlGaN/GaN HEMTs on SiC and Si substrates for power applications.C. Fleury, M. Capriotti, M. Rigato, O. Hilt, J. Würfl, J. Derluyn, S. Steinhauer, A. Köck, G. Strasser, and D. Pogany. Microelectronics Reliability, 55 (9-10): 1687-1691 (2015)ESD characterization of multi-finger RF nMOSFET transistors by TLP and transient interferometric mapping technique.M. Rigato, C. Fleury, M. Heer, M. Capriotti, W. Simbürger, and D. Pogany. Microelectronics Reliability, 55 (9-10): 1471-1475 (2015)Statistics and localisation of vertical breakdown in AlGaN/GaN HEMTs on SiC and Si substrates for power applications.C. Fleury, R. Zhytnytska, S. Bychikhin, M. Capriotti, O. Hilt, D. Visalli, G. Meneghesso, E. Zanoni, J. Würfl, J. Derluyn and 2 other author(s). Microelectronics Reliability, 53 (9-11): 1444-1449 (2013)A CMOS Compatible Pyroelectric Mid-Infrared Detector Based on Aluminium Nitride.C. Ranacher, C. Consani, A. Tortschanoff, L. Rauter, D. Holzmann, C. Fleury, G. Stocker, A. Fant, H. Schaunig, P. Irsigler and 2 other author(s). Sensors, 19 (11): 2513 (2019)

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Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure.

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copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure.

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Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure.